FR2200636A1 - - Google Patents

Info

Publication number
FR2200636A1
FR2200636A1 FR7334414A FR7334414A FR2200636A1 FR 2200636 A1 FR2200636 A1 FR 2200636A1 FR 7334414 A FR7334414 A FR 7334414A FR 7334414 A FR7334414 A FR 7334414A FR 2200636 A1 FR2200636 A1 FR 2200636A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7334414A
Other languages
French (fr)
Other versions
FR2200636B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2200636A1 publication Critical patent/FR2200636A1/fr
Application granted granted Critical
Publication of FR2200636B1 publication Critical patent/FR2200636B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
FR7334414A 1972-09-25 1973-09-25 Expired FR2200636B1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (https=) 1972-09-25 1972-09-25

Publications (2)

Publication Number Publication Date
FR2200636A1 true FR2200636A1 (https=) 1974-04-19
FR2200636B1 FR2200636B1 (https=) 1978-06-30

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7334414A Expired FR2200636B1 (https=) 1972-09-25 1973-09-25

Country Status (7)

Country Link
JP (1) JPS521877B2 (https=)
CA (1) CA1004780A (https=)
DE (1) DE2348262A1 (https=)
FR (1) FR2200636B1 (https=)
GB (1) GB1429696A (https=)
IT (1) IT994322B (https=)
NL (1) NL184814C (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5497298B2 (ja) * 2009-01-16 2014-05-21 久光製薬株式会社 シート状貼付剤
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138129A (en) * 1966-10-18 1968-12-27 Int Standard Electric Corp Transistors
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (https=) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138129A (en) * 1966-10-18 1968-12-27 Int Standard Electric Corp Transistors
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (https=) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Also Published As

Publication number Publication date
JPS521877B2 (https=) 1977-01-18
IT994322B (it) 1975-10-20
FR2200636B1 (https=) 1978-06-30
NL184814B (nl) 1989-06-01
GB1429696A (https=) 1976-03-24
NL7313221A (https=) 1974-03-27
JPS4953386A (https=) 1974-05-23
DE2348262A1 (de) 1974-04-18
NL184814C (nl) 1989-11-01
CA1004780A (en) 1977-02-01

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