JPS4953386A - - Google Patents
Info
- Publication number
- JPS4953386A JPS4953386A JP47096007A JP9600772A JPS4953386A JP S4953386 A JPS4953386 A JP S4953386A JP 47096007 A JP47096007 A JP 47096007A JP 9600772 A JP9600772 A JP 9600772A JP S4953386 A JPS4953386 A JP S4953386A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47096007A JPS521877B2 (https=) | 1972-09-25 | 1972-09-25 | |
| GB4475173A GB1429696A (https=) | 1972-09-25 | 1973-09-24 | |
| CA181,779A CA1004780A (en) | 1972-09-25 | 1973-09-24 | Semiconductor integrated circuit mis structure |
| FR7334414A FR2200636B1 (https=) | 1972-09-25 | 1973-09-25 | |
| IT52725/73A IT994322B (it) | 1972-09-25 | 1973-09-25 | Circuito integrato a semiconduttore |
| NLAANVRAGE7313221,A NL184814C (nl) | 1972-09-25 | 1973-09-25 | Geintegreerde halfgeleiderschakeling. |
| DE19732348262 DE2348262A1 (de) | 1972-09-25 | 1973-09-25 | Integrierte halbleiterschaltung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47096007A JPS521877B2 (https=) | 1972-09-25 | 1972-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4953386A true JPS4953386A (https=) | 1974-05-23 |
| JPS521877B2 JPS521877B2 (https=) | 1977-01-18 |
Family
ID=14153103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47096007A Expired JPS521877B2 (https=) | 1972-09-25 | 1972-09-25 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS521877B2 (https=) |
| CA (1) | CA1004780A (https=) |
| DE (1) | DE2348262A1 (https=) |
| FR (1) | FR2200636B1 (https=) |
| GB (1) | GB1429696A (https=) |
| IT (1) | IT994322B (https=) |
| NL (1) | NL184814C (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5994450A (ja) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | 半導体装置の製造方法 |
| KR20160012138A (ko) | 2013-05-29 | 2016-02-02 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 제조방법 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177587A (en) * | 1989-07-21 | 1993-01-05 | Linear Technology Corporation | Push-back junction isolation semiconductor structure and method |
| JP5497298B2 (ja) * | 2009-01-16 | 2014-05-21 | 久光製薬株式会社 | シート状貼付剤 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1539873B2 (de) * | 1966-10-18 | 1971-03-11 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Transistor |
| US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
| FR2036530A5 (https=) * | 1969-03-24 | 1970-12-24 | Radiotechnique Compelec |
-
1972
- 1972-09-25 JP JP47096007A patent/JPS521877B2/ja not_active Expired
-
1973
- 1973-09-24 CA CA181,779A patent/CA1004780A/en not_active Expired
- 1973-09-24 GB GB4475173A patent/GB1429696A/en not_active Expired
- 1973-09-25 DE DE19732348262 patent/DE2348262A1/de not_active Withdrawn
- 1973-09-25 IT IT52725/73A patent/IT994322B/it active
- 1973-09-25 NL NLAANVRAGE7313221,A patent/NL184814C/xx not_active IP Right Cessation
- 1973-09-25 FR FR7334414A patent/FR2200636B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5994450A (ja) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | 半導体装置の製造方法 |
| KR20160012138A (ko) | 2013-05-29 | 2016-02-02 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS521877B2 (https=) | 1977-01-18 |
| IT994322B (it) | 1975-10-20 |
| FR2200636B1 (https=) | 1978-06-30 |
| NL184814B (nl) | 1989-06-01 |
| GB1429696A (https=) | 1976-03-24 |
| NL7313221A (https=) | 1974-03-27 |
| DE2348262A1 (de) | 1974-04-18 |
| NL184814C (nl) | 1989-11-01 |
| FR2200636A1 (https=) | 1974-04-19 |
| CA1004780A (en) | 1977-02-01 |