JPS5218552B2 - - Google Patents

Info

Publication number
JPS5218552B2
JPS5218552B2 JP49103571A JP10357174A JPS5218552B2 JP S5218552 B2 JPS5218552 B2 JP S5218552B2 JP 49103571 A JP49103571 A JP 49103571A JP 10357174 A JP10357174 A JP 10357174A JP S5218552 B2 JPS5218552 B2 JP S5218552B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49103571A
Other versions
JPS5057385A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5057385A publication Critical patent/JPS5057385A/ja
Publication of JPS5218552B2 publication Critical patent/JPS5218552B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP49103571A 1973-09-10 1974-09-10 Expired JPS5218552B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00395804A US3849659A (en) 1973-09-10 1973-09-10 Alignment of a patterned electron beam with a member by electron backscatter

Publications (2)

Publication Number Publication Date
JPS5057385A JPS5057385A (ja) 1975-05-19
JPS5218552B2 true JPS5218552B2 (ja) 1977-05-23

Family

ID=23564593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49103571A Expired JPS5218552B2 (ja) 1973-09-10 1974-09-10

Country Status (4)

Country Link
US (1) US3849659A (ja)
JP (1) JPS5218552B2 (ja)
DE (1) DE2443121A1 (ja)
GB (1) GB1439118A (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5398781A (en) * 1976-11-25 1978-08-29 Jeol Ltd Electron ray exposure unit
US4109029A (en) * 1977-01-24 1978-08-22 Hughes Aircraft Company High resolution electron beam microfabrication process for fabricating small geometry semiconductor devices
DE2939044A1 (de) * 1979-09-27 1981-04-09 Ibm Deutschland Gmbh, 7000 Stuttgart Einrichtung fuer elektronenstrahllithographie
US4327292A (en) * 1980-05-13 1982-04-27 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
US4431923A (en) * 1980-05-13 1984-02-14 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
US4385238A (en) * 1981-03-03 1983-05-24 Veeco Instruments Incorporated Reregistration system for a charged particle beam exposure system
JPS5960306A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd 位置決定用チップを備えた試料
US4528452A (en) * 1982-12-09 1985-07-09 Electron Beam Corporation Alignment and detection system for electron image projectors
GB2146168A (en) * 1983-09-05 1985-04-11 Philips Electronic Associated Electron image projector
GB2157069A (en) * 1984-04-02 1985-10-16 Philips Electronic Associated Step and repeat electron image projector
JP2723508B2 (ja) * 1985-10-21 1998-03-09 日本電気株式会社 電子線直接描画のためのアライメント方法
US4871919A (en) * 1988-05-20 1989-10-03 International Business Machines Corporation Electron beam lithography alignment using electric field changes to achieve registration
US6146910A (en) * 1999-02-02 2000-11-14 The United States Of America, As Represented By The Secretary Of Commerce Target configuration and method for extraction of overlay vectors from targets having concealed features
EP1342465B1 (en) * 2002-03-05 2011-10-19 Kao Corporation Foam-type hair dye and foam-type hair dye discharge container
JP4662053B2 (ja) * 2003-07-30 2011-03-30 アプライド マテリアルズ イスラエル リミテッド 複数の検出器を有する走査電子顕微鏡および複数の検出器ベースのイメージング方法
US7842933B2 (en) * 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
JP4538421B2 (ja) * 2006-02-24 2010-09-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
DE102016223664B4 (de) * 2016-11-29 2024-05-08 Carl Zeiss Smt Gmbh Strahlaustaster und Verfahren zum Austasten eines geladenen Teilchenstrahls
JP7007152B2 (ja) * 2017-10-19 2022-01-24 株式会社アドバンテスト 三次元積層造形装置および積層造形方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1533755A (fr) * 1966-08-16 1968-07-19 Jeol Ltd Dispositif pour le réglage du point de traitement dans un appareil à faisceau électrique ou analogue
DE1804646B2 (de) * 1968-10-18 1973-03-22 Siemens AG, 1000 Berlin u. 8000 München Korpuskularstrahl-bearbeitungsgeraet
US3644700A (en) * 1969-12-15 1972-02-22 Ibm Method and apparatus for controlling an electron beam
US3710101A (en) * 1970-10-06 1973-01-09 Westinghouse Electric Corp Apparatus and method for alignment of members to electron beams
US3745358A (en) * 1971-05-10 1973-07-10 Radiant Energy Systems Alignment method and apparatus for electron projection systems

Also Published As

Publication number Publication date
JPS5057385A (ja) 1975-05-19
US3849659A (en) 1974-11-19
GB1439118A (en) 1976-06-09
DE2443121A1 (de) 1975-03-13

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