JPS52147933A - Regenerative circuit for charge coupled element and method of driving same - Google Patents

Regenerative circuit for charge coupled element and method of driving same

Info

Publication number
JPS52147933A
JPS52147933A JP10867976A JP10867976A JPS52147933A JP S52147933 A JPS52147933 A JP S52147933A JP 10867976 A JP10867976 A JP 10867976A JP 10867976 A JP10867976 A JP 10867976A JP S52147933 A JPS52147933 A JP S52147933A
Authority
JP
Japan
Prior art keywords
charge coupled
regenerative circuit
coupled element
driving same
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10867976A
Other languages
English (en)
Inventor
Hofuman Kuruto
Moisuburukaa Giyuntaa
Uotoruba Gotsutofuriito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS52147933A publication Critical patent/JPS52147933A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825Structures for regeneration, refreshing, leakage compensation or the like
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30Time-delay networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10867976A 1975-09-18 1976-09-10 Regenerative circuit for charge coupled element and method of driving same Pending JPS52147933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752541686 DE2541686A1 (de) 1975-09-18 1975-09-18 Regenerierschaltung fuer ladungsgekoppelte elemente

Publications (1)

Publication Number Publication Date
JPS52147933A true JPS52147933A (en) 1977-12-08

Family

ID=5956824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10867976A Pending JPS52147933A (en) 1975-09-18 1976-09-10 Regenerative circuit for charge coupled element and method of driving same

Country Status (5)

Country Link
US (1) US4048519A (ja)
JP (1) JPS52147933A (ja)
DE (1) DE2541686A1 (ja)
FR (1) FR2325152A1 (ja)
GB (1) GB1565666A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2258783B1 (ja) * 1974-01-25 1977-09-16 Valentin Camille
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
DE2721812C2 (de) * 1977-05-13 1986-09-18 Siemens AG, 1000 Berlin und 8000 München Auswerteschaltung für eine Ladungsverschiebeanordnung
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
DE2839834A1 (de) * 1978-09-13 1980-03-27 Siemens Ag Lineare ausgangsstufe fuer ladungsgekoppelte schaltungen
NL8600185A (nl) * 1986-01-28 1987-08-17 Philips Nv Ladingsgekoppelde inrichting.
US8450827B2 (en) * 2011-01-25 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. MOS varactor structure and methods
CN103619605B (zh) * 2011-06-27 2015-11-25 惠普发展公司,有限责任合伙企业 墨水液面传感器和相关方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
FR2154395B1 (ja) * 1971-05-03 1974-06-28 Ibm
JPS5214944B1 (ja) * 1971-06-04 1977-04-25
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
GB1435708A (en) * 1972-09-25 1976-05-12 Rca Corp Charge amplifier defibrillators
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier
US3949245A (en) * 1974-10-24 1976-04-06 Texas Instruments Incorporated Method and system for sensing charges at distributed points on a charge coupled device
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US3969634A (en) * 1975-07-31 1976-07-13 Hughes Aircraft Company Bucket background subtraction circuit for charge-coupled devices

Also Published As

Publication number Publication date
DE2541686A1 (de) 1977-03-24
FR2325152B1 (ja) 1979-09-28
FR2325152A1 (fr) 1977-04-15
US4048519A (en) 1977-09-13
GB1565666A (en) 1980-04-23

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