FR2325152A1 - Circuit de regeneration pour des elements utilisant le couplage direct de charge - Google Patents

Circuit de regeneration pour des elements utilisant le couplage direct de charge

Info

Publication number
FR2325152A1
FR2325152A1 FR7626500A FR7626500A FR2325152A1 FR 2325152 A1 FR2325152 A1 FR 2325152A1 FR 7626500 A FR7626500 A FR 7626500A FR 7626500 A FR7626500 A FR 7626500A FR 2325152 A1 FR2325152 A1 FR 2325152A1
Authority
FR
France
Prior art keywords
elements
regeneration circuit
load coupling
direct load
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626500A
Other languages
English (en)
Other versions
FR2325152B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2325152A1 publication Critical patent/FR2325152A1/fr
Application granted granted Critical
Publication of FR2325152B1 publication Critical patent/FR2325152B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30—Time-delay networks
FR7626500A 1975-09-18 1976-09-02 Circuit de regeneration pour des elements utilisant le couplage direct de charge Granted FR2325152A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752541686 DE2541686A1 (de) 1975-09-18 1975-09-18 Regenerierschaltung fuer ladungsgekoppelte elemente

Publications (2)

Publication Number Publication Date
FR2325152A1 true FR2325152A1 (fr) 1977-04-15
FR2325152B1 FR2325152B1 (fr) 1979-09-28

Family

ID=5956824

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626500A Granted FR2325152A1 (fr) 1975-09-18 1976-09-02 Circuit de regeneration pour des elements utilisant le couplage direct de charge

Country Status (5)

Country Link
US (1) US4048519A (fr)
JP (1) JPS52147933A (fr)
DE (1) DE2541686A1 (fr)
FR (1) FR2325152A1 (fr)
GB (1) GB1565666A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2258783B1 (fr) * 1974-01-25 1977-09-16 Valentin Camille
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
DE2721812C2 (de) * 1977-05-13 1986-09-18 Siemens AG, 1000 Berlin und 8000 München Auswerteschaltung für eine Ladungsverschiebeanordnung
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
DE2839834A1 (de) * 1978-09-13 1980-03-27 Siemens Ag Lineare ausgangsstufe fuer ladungsgekoppelte schaltungen
NL8600185A (nl) * 1986-01-28 1987-08-17 Philips Nv Ladingsgekoppelde inrichting.
US8450827B2 (en) * 2011-01-25 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. MOS varactor structure and methods
CN103619605B (zh) * 2011-06-27 2015-11-25 惠普发展公司，有限责任合伙企业 墨水液面传感器和相关方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2154395A1 (fr) * 1971-05-03 1973-05-11 Ibm

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
JPS5214944B1 (fr) * 1971-06-04 1977-04-25
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
GB1435708A (en) * 1972-09-25 1976-05-12 Rca Corp Charge amplifier defibrillators
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier
US3949245A (en) * 1974-10-24 1976-04-06 Texas Instruments Incorporated Method and system for sensing charges at distributed points on a charge coupled device
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US3969634A (en) * 1975-07-31 1976-07-13 Hughes Aircraft Company Bucket background subtraction circuit for charge-coupled devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2154395A1 (fr) * 1971-05-03 1973-05-11 Ibm

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE DT ELEKTRONIK, VOL. 22, NO. 5, MAI 1973 "BINARE KAPAZITATEN" IN MOS-SCHALTUNGEN", L.TALAMONTI, PAGES 179-181) *

Also Published As

Publication number Publication date
DE2541686A1 (de) 1977-03-24
FR2325152B1 (fr) 1979-09-28
JPS52147933A (en) 1977-12-08
US4048519A (en) 1977-09-13
GB1565666A (en) 1980-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse