JPS52142936A - Semiconductor memory circuit - Google Patents
Semiconductor memory circuitInfo
- Publication number
- JPS52142936A JPS52142936A JP5911776A JP5911776A JPS52142936A JP S52142936 A JPS52142936 A JP S52142936A JP 5911776 A JP5911776 A JP 5911776A JP 5911776 A JP5911776 A JP 5911776A JP S52142936 A JPS52142936 A JP S52142936A
- Authority
- JP
- Japan
- Prior art keywords
- memory circuit
- semiconductor memory
- write
- influenced
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51059117A JPS592996B2 (ja) | 1976-05-24 | 1976-05-24 | 半導体記憶回路 |
US05/798,865 US4161040A (en) | 1976-05-24 | 1977-05-20 | Data-in amplifier for an MISFET memory device having a clamped output except during the write operation |
DE2723188A DE2723188B2 (de) | 1976-05-24 | 1977-05-23 | MIS-FET-Speicher |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51059117A JPS592996B2 (ja) | 1976-05-24 | 1976-05-24 | 半導体記憶回路 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59236605A Division JPS60121596A (ja) | 1984-11-12 | 1984-11-12 | 半導体記憶回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52142936A true JPS52142936A (en) | 1977-11-29 |
JPS592996B2 JPS592996B2 (ja) | 1984-01-21 |
Family
ID=13104041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51059117A Expired JPS592996B2 (ja) | 1976-05-24 | 1976-05-24 | 半導体記憶回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4161040A (ja) |
JP (1) | JPS592996B2 (ja) |
DE (1) | DE2723188B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56106425A (en) * | 1980-01-25 | 1981-08-24 | Mitsubishi Electric Corp | Semiconductor buffer circuit |
JPH02177196A (ja) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | スタティック型半導体メモリ |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217502A (en) * | 1977-09-10 | 1980-08-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Converter producing three output states |
JPS6035756B2 (ja) * | 1977-12-27 | 1985-08-16 | 日本電気株式会社 | 論理回路 |
US4256974A (en) * | 1978-09-29 | 1981-03-17 | Rockwell International Corporation | Metal oxide semiconductor (MOS) input circuit with hysteresis |
JPS5570993A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Memory circuit |
DE2855118C2 (de) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamischer FET-Speicher |
US4417162A (en) * | 1979-01-11 | 1983-11-22 | Bell Telephone Laboratories, Incorporated | Tri-state logic buffer circuit |
US4270189A (en) * | 1979-11-06 | 1981-05-26 | International Business Machines Corporation | Read only memory circuit |
US4309630A (en) * | 1979-12-10 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Buffer circuitry |
JPS595989B2 (ja) * | 1980-02-16 | 1984-02-08 | 富士通株式会社 | スタティック型ランダムアクセスメモリ |
US4355377A (en) * | 1980-06-30 | 1982-10-19 | Inmos Corporation | Asynchronously equillibrated and pre-charged static ram |
JPS57172586A (en) * | 1981-04-16 | 1982-10-23 | Toshiba Corp | Semiconductor integrated circuit |
JPS589285A (ja) * | 1981-07-08 | 1983-01-19 | Toshiba Corp | 半導体装置 |
JPS59121688A (ja) * | 1982-12-28 | 1984-07-13 | Toshiba Corp | スタテイツクランダムアクセスメモリ− |
US4593383A (en) * | 1983-11-02 | 1986-06-03 | Raytheon Company | Integated circuit memory |
FR2599910B1 (fr) * | 1986-06-10 | 1988-09-02 | Labo Electronique Physique | Circuit amplificateur differentiel regenerateur de signaux complementaires de faible amplitude |
KR900006293B1 (ko) * | 1987-06-20 | 1990-08-27 | 삼성전자 주식회사 | 씨모오스 디램의 데이터 전송회로 |
USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
US5297097A (en) * | 1988-06-17 | 1994-03-22 | Hitachi Ltd. | Large scale integrated circuit for low voltage operation |
US4985864A (en) * | 1989-06-23 | 1991-01-15 | Vlsi Technology, Inc. | Static random access memory having column decoded bit line bias |
JPH03252988A (ja) * | 1990-03-02 | 1991-11-12 | Nec Corp | ダイナミック型半導体メモリ |
US5301155A (en) * | 1990-03-20 | 1994-04-05 | Mitsubishi Denki Kabushiki Kaisha | Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits |
US5473471A (en) * | 1993-04-16 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Complex lens with diffraction grating |
JPH08278916A (ja) * | 1994-11-30 | 1996-10-22 | Hitachi Ltd | マルチチャネルメモリシステム、転送情報同期化方法及び信号転送回路 |
JP2776327B2 (ja) * | 1995-08-31 | 1998-07-16 | 日本電気株式会社 | データ転送装置 |
KR100212420B1 (ko) * | 1995-09-25 | 1999-08-02 | 김영환 | 테스트회로를 내장한 캐쉬 스태틱램 |
US5825715A (en) * | 1997-05-13 | 1998-10-20 | Cypress Semiconductor Corp. | Method and apparatus for preventing write operations in a memory device |
JP2000163956A (ja) * | 1998-11-24 | 2000-06-16 | Sharp Corp | 半導体記憶装置 |
US7408813B2 (en) * | 2006-08-03 | 2008-08-05 | Micron Technology, Inc. | Block erase for volatile memory |
WO2017190652A1 (en) * | 2016-05-04 | 2017-11-09 | The Hong Kong University Of Science And Technology | Power device with integrated gate driver |
US10630293B2 (en) * | 2017-03-31 | 2020-04-21 | Adanced Micro Devices, Inc. | High speed transmitter |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3594736A (en) * | 1968-11-29 | 1971-07-20 | Motorola Inc | Mos read-write system |
US3949385A (en) * | 1974-12-23 | 1976-04-06 | Ibm Corporation | D.C. Stable semiconductor memory cell |
US3938108A (en) * | 1975-02-03 | 1976-02-10 | Intel Corporation | Erasable programmable read-only memory |
JPS51139220A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Sense amplifier |
US4019068A (en) * | 1975-09-02 | 1977-04-19 | Motorola, Inc. | Low power output disable circuit for random access memory |
-
1976
- 1976-05-24 JP JP51059117A patent/JPS592996B2/ja not_active Expired
-
1977
- 1977-05-20 US US05/798,865 patent/US4161040A/en not_active Expired - Lifetime
- 1977-05-23 DE DE2723188A patent/DE2723188B2/de not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56106425A (en) * | 1980-01-25 | 1981-08-24 | Mitsubishi Electric Corp | Semiconductor buffer circuit |
JPH02177196A (ja) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | スタティック型半導体メモリ |
Also Published As
Publication number | Publication date |
---|---|
US4161040A (en) | 1979-07-10 |
DE2723188A1 (de) | 1977-12-08 |
JPS592996B2 (ja) | 1984-01-21 |
DE2723188B2 (de) | 1978-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52142936A (en) | Semiconductor memory circuit | |
JPS5333542A (en) | Signal detection circuit | |
JPS52142442A (en) | Memory circuit | |
JPS5370635A (en) | Information memory processor | |
JPS5298433A (en) | Semiconductor memory | |
JPS51139220A (en) | Sense amplifier | |
JPS51126733A (en) | Bubble memory characteristic measuring method. | |
JPS5210032A (en) | Construction method of semiconductor memory unit | |
JPS5368182A (en) | Production of semiconductor memory device | |
JPS52102657A (en) | Transistor amplifier circuit | |
JPS5368039A (en) | Error correction system for semiconductor memory unit | |
JPS51113764A (en) | Noise detector | |
JPS52124825A (en) | High performance memory circuit | |
JPS5378131A (en) | Semiconductor memory element | |
JPS5269533A (en) | Double keying prevention circuit | |
JPS5344161A (en) | Electronic circuit | |
JPS52107744A (en) | Program control order circuit | |
JPS5289480A (en) | Semiconductive nonvoltile memory device | |
JPS52144921A (en) | Clear circuit | |
JPS53102684A (en) | Semiconductor memory device | |
JPS52122047A (en) | Reset signal generation circuit | |
JPS5234621A (en) | Data write-in/read-out equipment | |
JPS5325321A (en) | Reading controller for memory unit | |
JPS5379329A (en) | Test method of memory circuit | |
JPS5368138A (en) | Interrupt priority determining circuit |