JPS52138072A - Manufacture of silicon single crystal - Google Patents
Manufacture of silicon single crystalInfo
- Publication number
- JPS52138072A JPS52138072A JP5432376A JP5432376A JPS52138072A JP S52138072 A JPS52138072 A JP S52138072A JP 5432376 A JP5432376 A JP 5432376A JP 5432376 A JP5432376 A JP 5432376A JP S52138072 A JPS52138072 A JP S52138072A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- manufacture
- fluoride
- converting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To decrease the dislocation rate, by inducing gaseous F2 and/or fluoride to the growth atmosphere of silicon single crystal, converting Si or silicon oxide to non-condensing material and preventing the generation of floating particles.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5432376A JPS52138072A (en) | 1976-05-14 | 1976-05-14 | Manufacture of silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5432376A JPS52138072A (en) | 1976-05-14 | 1976-05-14 | Manufacture of silicon single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52138072A true JPS52138072A (en) | 1977-11-17 |
Family
ID=12967367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5432376A Pending JPS52138072A (en) | 1976-05-14 | 1976-05-14 | Manufacture of silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52138072A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008013325A1 (en) * | 2008-03-10 | 2009-09-24 | Siltronic Ag | Single crystal silicon wafer and process for its production |
-
1976
- 1976-05-14 JP JP5432376A patent/JPS52138072A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008013325A1 (en) * | 2008-03-10 | 2009-09-24 | Siltronic Ag | Single crystal silicon wafer and process for its production |
US7868325B2 (en) | 2008-03-10 | 2011-01-11 | Siltronic Ag | Semiconductor wafer of single crystalline silicon and process for its manufacture |
KR101028443B1 (en) | 2008-03-10 | 2011-04-14 | 실트로닉 아게 | Semiconductor wafer of single crystalline silicon and process for its manufacture |
DE102008013325B4 (en) * | 2008-03-10 | 2011-12-01 | Siltronic Ag | Single crystal silicon wafer and process for its production |
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