JPS52119134A - Mos dynamic memory - Google Patents

Mos dynamic memory

Info

Publication number
JPS52119134A
JPS52119134A JP3577576A JP3577576A JPS52119134A JP S52119134 A JPS52119134 A JP S52119134A JP 3577576 A JP3577576 A JP 3577576A JP 3577576 A JP3577576 A JP 3577576A JP S52119134 A JPS52119134 A JP S52119134A
Authority
JP
Japan
Prior art keywords
dynamic memory
mos dynamic
mos
ratioless
actuate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3577576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS561715B2 (enExample
Inventor
Isao Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3577576A priority Critical patent/JPS52119134A/ja
Publication of JPS52119134A publication Critical patent/JPS52119134A/ja
Publication of JPS561715B2 publication Critical patent/JPS561715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP3577576A 1976-03-31 1976-03-31 Mos dynamic memory Granted JPS52119134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3577576A JPS52119134A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3577576A JPS52119134A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Publications (2)

Publication Number Publication Date
JPS52119134A true JPS52119134A (en) 1977-10-06
JPS561715B2 JPS561715B2 (enExample) 1981-01-14

Family

ID=12451249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3577576A Granted JPS52119134A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Country Status (1)

Country Link
JP (1) JPS52119134A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574830U (ja) * 1992-03-11 1993-10-12 ダイニック株式会社 エンボス加工機

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
JPS5135774A (en) * 1974-09-19 1976-03-26 Japan Vilene Co Ltd Fushokufushiito oyobi sonoseizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
JPS5135774A (en) * 1974-09-19 1976-03-26 Japan Vilene Co Ltd Fushokufushiito oyobi sonoseizohoho

Also Published As

Publication number Publication date
JPS561715B2 (enExample) 1981-01-14

Similar Documents

Publication Publication Date Title
JPS52119133A (en) Mos dynamic memory
JPS52119134A (en) Mos dynamic memory
JPS52119131A (en) Mos dynamic memory
JPS52119132A (en) Mos dynamic memory
JPS53121561A (en) Mos integrated circuit device
JPS5271141A (en) Word line driving circuit
JPS5313468A (en) Timepiece with additional mechanism
JPS53148348A (en) Semiconductor dynamic memory unit
JPS5429531A (en) Sense circuit for cmos static random access memory
JPS5316532A (en) Sense amplifier
JPS5266366A (en) Semiconductor logic circuit
JPS51148448A (en) Instrumentation unit
JPS5266365A (en) Semiconductor logic circuit
JPS5361981A (en) Semiconductor device
JPS5367338A (en) Semiconductor logical circuit device
JPS5233435A (en) Memory unit
JPS5332775A (en) Period comparison circuit
JPS5248459A (en) Complementary symmetry type mos transistor circuit
JPS52122062A (en) Interface circuit
JPS5315054A (en) Logic circuit
JPS5378160A (en) Integrated logic circuit
JPS5292442A (en) Memory circuit
JPS52153629A (en) Memory device
JPS5290239A (en) Increment circuit
JPS52110530A (en) Mos random access memory