Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP2210076ApriorityCriticalpatent/JPS52105580A/en
Publication of JPS52105580ApublicationCriticalpatent/JPS52105580A/en
PURPOSE:To prevent the subsidence of bad quality crystal, generated at near surface and to obtain a good and large crystal at an inner wall and bottom, by floating the buffer plate, being not corrosive against the solution, near the surface in the solution, used for crystal growth.
JP2210076A1976-03-031976-03-03Growing method of single crystal
PendingJPS52105580A
(en)