JPS52101967A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52101967A
JPS52101967A JP1791176A JP1791176A JPS52101967A JP S52101967 A JPS52101967 A JP S52101967A JP 1791176 A JP1791176 A JP 1791176A JP 1791176 A JP1791176 A JP 1791176A JP S52101967 A JPS52101967 A JP S52101967A
Authority
JP
Japan
Prior art keywords
semiconductor device
cdv
aperture
make
oxidation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1791176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5314912B2 (enExample
Inventor
Minoru Kimura
Hiroyuki Tango
Yukio Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1791176A priority Critical patent/JPS52101967A/ja
Priority to US05/770,605 priority patent/US4073055A/en
Publication of JPS52101967A publication Critical patent/JPS52101967A/ja
Publication of JPS5314912B2 publication Critical patent/JPS5314912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P52/00—
    • H10P34/42—
    • H10P54/00—
    • H10W46/00—
    • H10W46/501—

Landscapes

  • Weting (AREA)
  • Dicing (AREA)
JP1791176A 1976-02-23 1976-02-23 Semiconductor device Granted JPS52101967A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1791176A JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device
US05/770,605 US4073055A (en) 1976-02-23 1977-02-22 Method for manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1791176A JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52101967A true JPS52101967A (en) 1977-08-26
JPS5314912B2 JPS5314912B2 (enExample) 1978-05-20

Family

ID=11956923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1791176A Granted JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device

Country Status (2)

Country Link
US (1) US4073055A (enExample)
JP (1) JPS52101967A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126936A (en) * 1980-03-12 1981-10-05 Toshiba Corp Semiconductor device and production thereof
US4485264A (en) * 1982-11-09 1984-11-27 Energy Conversion Devices, Inc. Isolation layer for photovoltaic device and method of producing same
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
WO1986006176A1 (en) * 1985-04-08 1986-10-23 Sgs Semiconductor Corporation Target keys for wafer probe alignment
KR100287919B1 (ko) * 1992-01-06 2001-05-02 사토 게니치로 더미 패턴을 갖는 반도체 칩
JPH05335529A (ja) * 1992-05-28 1993-12-17 Fujitsu Ltd 半導体装置およびその製造方法
JPH0888201A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd サファイアを基板とする半導体素子
US6022792A (en) 1996-03-13 2000-02-08 Seiko Instruments, Inc. Semiconductor dicing and assembling method
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
US7183137B2 (en) * 2003-12-01 2007-02-27 Taiwan Semiconductor Manufacturing Company Method for dicing semiconductor wafers
US7247570B2 (en) * 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
JP2008218656A (ja) * 2007-03-02 2008-09-18 Denso Corp 半導体装置の製造方法及び半導体ウエハ
CN104108139B (zh) * 2013-04-18 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种mems晶圆的切割方法
WO2015019540A1 (ja) * 2013-08-08 2015-02-12 シャープ株式会社 半導体素子基板およびその製造方法
CN109983567B (zh) * 2019-02-13 2020-05-22 长江存储科技有限责任公司 用于在半导体制造中定位图案的标记

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3903591A (en) * 1971-09-22 1975-09-09 Siemens Ag Semiconductor arrangement
US3965568A (en) * 1973-08-27 1976-06-29 Texas Instruments Incorporated Process for fabrication and assembly of semiconductor devices

Also Published As

Publication number Publication date
US4073055A (en) 1978-02-14
JPS5314912B2 (enExample) 1978-05-20

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