JPS5210086A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5210086A
JPS5210086A JP50086057A JP8605775A JPS5210086A JP S5210086 A JPS5210086 A JP S5210086A JP 50086057 A JP50086057 A JP 50086057A JP 8605775 A JP8605775 A JP 8605775A JP S5210086 A JPS5210086 A JP S5210086A
Authority
JP
Japan
Prior art keywords
semiconductor device
pnp
effective
area
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50086057A
Other languages
Japanese (ja)
Other versions
JPS587067B2 (en
Inventor
Teruichiro Tanaka
Akio Kitamura
Koki Namita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50086057A priority Critical patent/JPS587067B2/en
Publication of JPS5210086A publication Critical patent/JPS5210086A/en
Publication of JPS587067B2 publication Critical patent/JPS587067B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase a current amplification factor greatly by increasing an effective emitter area and an effective collector area of a pnp Tr, in a semiconductor device having IIL structure of composite of an npn Tr and a pnp Tr.
JP50086057A 1975-07-14 1975-07-14 Manufacturing method of semiconductor device Expired JPS587067B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50086057A JPS587067B2 (en) 1975-07-14 1975-07-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50086057A JPS587067B2 (en) 1975-07-14 1975-07-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5210086A true JPS5210086A (en) 1977-01-26
JPS587067B2 JPS587067B2 (en) 1983-02-08

Family

ID=13876053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50086057A Expired JPS587067B2 (en) 1975-07-14 1975-07-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS587067B2 (en)

Also Published As

Publication number Publication date
JPS587067B2 (en) 1983-02-08

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