JPS5210086A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5210086A JPS5210086A JP50086057A JP8605775A JPS5210086A JP S5210086 A JPS5210086 A JP S5210086A JP 50086057 A JP50086057 A JP 50086057A JP 8605775 A JP8605775 A JP 8605775A JP S5210086 A JPS5210086 A JP S5210086A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pnp
- effective
- area
- npn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To increase a current amplification factor greatly by increasing an effective emitter area and an effective collector area of a pnp Tr, in a semiconductor device having IIL structure of composite of an npn Tr and a pnp Tr.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086057A JPS587067B2 (en) | 1975-07-14 | 1975-07-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086057A JPS587067B2 (en) | 1975-07-14 | 1975-07-14 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5210086A true JPS5210086A (en) | 1977-01-26 |
JPS587067B2 JPS587067B2 (en) | 1983-02-08 |
Family
ID=13876053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50086057A Expired JPS587067B2 (en) | 1975-07-14 | 1975-07-14 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS587067B2 (en) |
-
1975
- 1975-07-14 JP JP50086057A patent/JPS587067B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS587067B2 (en) | 1983-02-08 |
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