JPS5193171A - - Google Patents
Info
- Publication number
- JPS5193171A JPS5193171A JP51000038A JP3876A JPS5193171A JP S5193171 A JPS5193171 A JP S5193171A JP 51000038 A JP51000038 A JP 51000038A JP 3876 A JP3876 A JP 3876A JP S5193171 A JPS5193171 A JP S5193171A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/537,511 US3955210A (en) | 1974-12-30 | 1974-12-30 | Elimination of SCR structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5193171A true JPS5193171A (enExample) | 1976-08-16 |
| JPS5625027B2 JPS5625027B2 (enExample) | 1981-06-10 |
Family
ID=24142953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3876A Expired JPS5625027B2 (enExample) | 1974-12-30 | 1976-01-05 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3955210A (enExample) |
| JP (1) | JPS5625027B2 (enExample) |
| CA (1) | CA1030664A (enExample) |
| DE (1) | DE2554296C2 (enExample) |
| FR (1) | FR2296938A1 (enExample) |
| GB (1) | GB1502130A (enExample) |
| IT (1) | IT1058321B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016455A (ja) * | 1983-07-08 | 1985-01-28 | Seiko Epson Corp | 相補型ｍｉｓ半導体集積回路装置 |
| JPS63132467A (ja) * | 1986-11-24 | 1988-06-04 | Mitsubishi Electric Corp | 集積回路 |
| JPH05152523A (ja) * | 1992-05-18 | 1993-06-18 | Seiko Epson Corp | 相補型ｍｉｓ半導体集積回路装置 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168442A (en) * | 1975-07-18 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | CMOS FET device with abnormal current flow prevention |
| US4209713A (en) * | 1975-07-18 | 1980-06-24 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated |
| US4167747A (en) * | 1975-07-18 | 1979-09-11 | Tokyo Shibaura Electric Co., Ltd. | Complementary mosfet device and method of manufacturing the same |
| US4149176A (en) * | 1975-07-18 | 1979-04-10 | Tokyo Shibaura Electric Co., Ltd. | Complementary MOSFET device |
| GB1559583A (en) * | 1975-07-18 | 1980-01-23 | Tokyo Shibaura Electric Co | Complementary mosfet device and method of manufacturing the same |
| US4143391A (en) * | 1975-09-12 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Integrated circuit device |
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS5618469A (en) * | 1979-07-24 | 1981-02-21 | Fujitsu Ltd | Semiconductor device |
| JPS56162860A (en) * | 1980-05-19 | 1981-12-15 | Toshiba Corp | Semiconductor device |
| US4458262A (en) * | 1980-05-27 | 1984-07-03 | Supertex, Inc. | CMOS Device with ion-implanted channel-stop region and fabrication method therefor |
| DE3276981D1 (en) * | 1981-10-09 | 1987-09-17 | Toshiba Kk | Semiconductor device having a fuse element |
| JPS5873147A (ja) * | 1981-10-27 | 1983-05-02 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US4797724A (en) * | 1982-06-30 | 1989-01-10 | Honeywell Inc. | Reducing bipolar parasitic effects in IGFET devices |
| JPS59501766A (ja) * | 1982-09-20 | 1984-10-18 | セミ・プロセシ−ズ・インコ−ポレ−テッド | ラッチアップ保護用のガ−ドバンドを持つｃｍｏｓ集積回路 |
| JPH0828480B2 (ja) * | 1983-09-30 | 1996-03-21 | 富士通株式会社 | 半導体集積回路装置 |
| EP0160077A1 (en) * | 1983-10-31 | 1985-11-06 | Storage Technology Partners | Cmos integrated circuit configuration for eliminating latchup |
| DE3435751A1 (de) * | 1984-09-28 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung in komplementaerer schaltungstechnik mit ueberspannungsschutz-struktur |
| US4875151A (en) * | 1986-08-11 | 1989-10-17 | Ncr Corporation | Two transistor full wave rectifier |
| EP0283046B1 (en) * | 1987-03-18 | 1996-06-12 | Nec Corporation | Complementary integrated circuit device equipped with latch-up preventing means |
| FR2623016B1 (fr) * | 1987-11-06 | 1991-06-14 | Thomson Semiconducteurs | Dispositif de fusion d'un fusible dans un circuit integre de type cmos |
| US5828110A (en) * | 1995-06-05 | 1998-10-27 | Advanced Micro Devices, Inc. | Latchup-proof I/O circuit implementation |
| JP2002124580A (ja) * | 2000-10-18 | 2002-04-26 | Yamaha Corp | 入力保護回路 |
| JP2006013450A (ja) * | 2004-05-27 | 2006-01-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US8231056B2 (en) * | 2005-04-08 | 2012-07-31 | Authentec, Inc. | System for and method of protecting an integrated circuit from over currents |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| US3798512A (en) * | 1970-09-28 | 1974-03-19 | Ibm | Fet device with guard ring and fabrication method therefor |
| US3806371A (en) * | 1971-07-28 | 1974-04-23 | Motorola Inc | Method of making complementary monolithic insulated gate field effect transistors having low threshold voltage and low leakage current |
| US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1974
- 1974-12-30 US US05/537,511 patent/US3955210A/en not_active Expired - Lifetime
-
1975
- 1975-11-04 CA CA239,235A patent/CA1030664A/en not_active Expired
- 1975-11-17 GB GB47216/75A patent/GB1502130A/en not_active Expired
- 1975-11-28 FR FR7536911A patent/FR2296938A1/fr active Granted
- 1975-12-03 DE DE2554296A patent/DE2554296C2/de not_active Expired
- 1975-12-16 IT IT30341/75A patent/IT1058321B/it active
-
1976
- 1976-01-05 JP JP3876A patent/JPS5625027B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016455A (ja) * | 1983-07-08 | 1985-01-28 | Seiko Epson Corp | 相補型ｍｉｓ半導体集積回路装置 |
| JPS63132467A (ja) * | 1986-11-24 | 1988-06-04 | Mitsubishi Electric Corp | 集積回路 |
| JPH05152523A (ja) * | 1992-05-18 | 1993-06-18 | Seiko Epson Corp | 相補型ｍｉｓ半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1502130A (en) | 1978-02-22 |
| CA1030664A (en) | 1978-05-02 |
| US3955210A (en) | 1976-05-04 |
| DE2554296C2 (de) | 1985-11-28 |
| DE2554296A1 (de) | 1976-07-08 |
| IT1058321B (it) | 1982-04-10 |
| FR2296938A1 (fr) | 1976-07-30 |
| FR2296938B1 (enExample) | 1979-04-27 |
| JPS5625027B2 (enExample) | 1981-06-10 |