JPS51882A - Gaas no kisoseichohoho - Google Patents

Gaas no kisoseichohoho

Info

Publication number
JPS51882A
JPS51882A JP7041874A JP7041874A JPS51882A JP S51882 A JPS51882 A JP S51882A JP 7041874 A JP7041874 A JP 7041874A JP 7041874 A JP7041874 A JP 7041874A JP S51882 A JPS51882 A JP S51882A
Authority
JP
Japan
Prior art keywords
kisoseichohoho
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7041874A
Other languages
Japanese (ja)
Other versions
JPS5835960B2 (en
Inventor
Koetsu Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7041874A priority Critical patent/JPS5835960B2/en
Publication of JPS51882A publication Critical patent/JPS51882A/en
Publication of JPS5835960B2 publication Critical patent/JPS5835960B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7041874A 1974-06-20 1974-06-20 GAAS Expired JPS5835960B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7041874A JPS5835960B2 (en) 1974-06-20 1974-06-20 GAAS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7041874A JPS5835960B2 (en) 1974-06-20 1974-06-20 GAAS

Publications (2)

Publication Number Publication Date
JPS51882A true JPS51882A (en) 1976-01-07
JPS5835960B2 JPS5835960B2 (en) 1983-08-05

Family

ID=13430894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7041874A Expired JPS5835960B2 (en) 1974-06-20 1974-06-20 GAAS

Country Status (1)

Country Link
JP (1) JPS5835960B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326281A (en) * 1976-08-24 1978-03-10 Matsushita Electric Ind Co Ltd Gas phase crystal growth method
WO1993001614A1 (en) * 1991-07-05 1993-01-21 Mitsubishi Kasei Corporation Compound semiconductor and manufacturing method therefor
US5827365A (en) * 1991-07-05 1998-10-27 Mitsubishi Kasei Corporation Compound semiconductor and its fabrication
US11097269B2 (en) 2015-10-08 2021-08-24 Toppan Printing Co., Ltd. Microfluidic device and sample analysis method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832470A (en) * 1971-08-31 1973-04-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832470A (en) * 1971-08-31 1973-04-28

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326281A (en) * 1976-08-24 1978-03-10 Matsushita Electric Ind Co Ltd Gas phase crystal growth method
WO1993001614A1 (en) * 1991-07-05 1993-01-21 Mitsubishi Kasei Corporation Compound semiconductor and manufacturing method therefor
US5827365A (en) * 1991-07-05 1998-10-27 Mitsubishi Kasei Corporation Compound semiconductor and its fabrication
US11097269B2 (en) 2015-10-08 2021-08-24 Toppan Printing Co., Ltd. Microfluidic device and sample analysis method

Also Published As

Publication number Publication date
JPS5835960B2 (en) 1983-08-05

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