JPS5164873A - Soshino shorihoho - Google Patents

Soshino shorihoho

Info

Publication number
JPS5164873A
JPS5164873A JP50120370A JP12037075A JPS5164873A JP S5164873 A JPS5164873 A JP S5164873A JP 50120370 A JP50120370 A JP 50120370A JP 12037075 A JP12037075 A JP 12037075A JP S5164873 A JPS5164873 A JP S5164873A
Authority
JP
Japan
Prior art keywords
soshino
shorihoho
soshino shorihoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50120370A
Other languages
English (en)
Japanese (ja)
Other versions
JPS579492B2 (oth
Inventor
Kee Joonzu Robaato
Ee Meneshian Murado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Teletype Corp
Original Assignee
Teletype Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teletype Corp filed Critical Teletype Corp
Publication of JPS5164873A publication Critical patent/JPS5164873A/ja
Publication of JPS579492B2 publication Critical patent/JPS579492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
JP50120370A 1974-10-10 1975-10-07 Soshino shorihoho Granted JPS5164873A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US513908A US3920471A (en) 1974-10-10 1974-10-10 Prevention of aluminum etching during silox photoshaping

Publications (2)

Publication Number Publication Date
JPS5164873A true JPS5164873A (en) 1976-06-04
JPS579492B2 JPS579492B2 (oth) 1982-02-22

Family

ID=24045078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50120370A Granted JPS5164873A (en) 1974-10-10 1975-10-07 Soshino shorihoho

Country Status (5)

Country Link
US (1) US3920471A (oth)
JP (1) JPS5164873A (oth)
DE (1) DE2545153C2 (oth)
FR (1) FR2287524A1 (oth)
GB (1) GB1527106A (oth)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
DE4424145A1 (de) * 1993-10-14 1995-04-20 Hewlett Packard Co Fluor-passivierte chromatographische Systeme
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
JPH07283166A (ja) * 1994-02-20 1995-10-27 Semiconductor Energy Lab Co Ltd コンタクトホールの作製方法
TW371775B (en) * 1995-04-28 1999-10-11 Siemens Ag Method for the selective removal of silicon dioxide
ATE256770T1 (de) * 2001-06-20 2004-01-15 Wolf-Dieter Franz Verfahren zum reinigen und passivieren von leichtmetalllegierungsoberflächen
US8772133B2 (en) * 2012-06-11 2014-07-08 Infineon Technologies Ag Utilization of a metallization scheme as an etching mask

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600285A (oth) * 1968-03-28 1970-07-20
US3650960A (en) * 1969-05-06 1972-03-21 Allied Chem Etching solutions
DE1951968A1 (de) * 1969-10-15 1971-04-22 Philips Patentverwaltung AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
US3841905A (en) * 1970-11-19 1974-10-15 Rbp Chem Corp Method of preparing printed circuit boards with terminal tabs
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer

Also Published As

Publication number Publication date
FR2287524B1 (oth) 1980-03-28
JPS579492B2 (oth) 1982-02-22
DE2545153A1 (de) 1976-04-22
US3920471A (en) 1975-11-18
DE2545153C2 (de) 1985-12-12
GB1527106A (en) 1978-10-04
FR2287524A1 (fr) 1976-05-07

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