JPS516475A - 2sankashirikonhimakunoshoriho - Google Patents
2sankashirikonhimakunoshorihoInfo
- Publication number
- JPS516475A JPS516475A JP50065972A JP6597275A JPS516475A JP S516475 A JPS516475 A JP S516475A JP 50065972 A JP50065972 A JP 50065972A JP 6597275 A JP6597275 A JP 6597275A JP S516475 A JPS516475 A JP S516475A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01332—Making the insulator
- H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
- H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/20—Diffusion for doping of insulating layers
Landscapes
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05476837 USB476837I5 (enFirst) | 1974-06-06 | 1974-06-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS516475A true JPS516475A (en) | 1976-01-20 |
| JPS5340872B2 JPS5340872B2 (enFirst) | 1978-10-30 |
Family
ID=23893457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50065972A Granted JPS516475A (en) | 1974-06-06 | 1975-05-30 | 2sankashirikonhimakunoshoriho |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | USB476837I5 (enFirst) |
| JP (1) | JPS516475A (enFirst) |
| DE (1) | DE2524750C3 (enFirst) |
| FR (1) | FR2274141A1 (enFirst) |
| GB (1) | GB1458327A (enFirst) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826051A (ja) * | 1981-08-06 | 1983-02-16 | Asahi Glass Co Ltd | アルカリ拡散防止酸化ケイ素膜の形成されたガラス体 |
| JPS61164266A (ja) * | 1985-01-16 | 1986-07-24 | Nec Corp | 耐放射線性の強化された半導体装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3208087A1 (de) * | 1982-03-06 | 1983-09-15 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Verfahren zur passivierung von halbleitern |
| DE69311184T2 (de) * | 1992-03-27 | 1997-09-18 | Matsushita Electric Ind Co Ltd | Halbleitervorrichtung samt Herstellungsverfahren |
-
1974
- 1974-06-06 US US05476837 patent/USB476837I5/en active Pending
-
1975
- 1975-05-15 GB GB2060575A patent/GB1458327A/en not_active Expired
- 1975-05-30 JP JP50065972A patent/JPS516475A/ja active Granted
- 1975-06-04 DE DE2524750A patent/DE2524750C3/de not_active Expired
- 1975-06-05 FR FR7517620A patent/FR2274141A1/fr not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826051A (ja) * | 1981-08-06 | 1983-02-16 | Asahi Glass Co Ltd | アルカリ拡散防止酸化ケイ素膜の形成されたガラス体 |
| JPS61164266A (ja) * | 1985-01-16 | 1986-07-24 | Nec Corp | 耐放射線性の強化された半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2524750A1 (de) | 1975-12-18 |
| GB1458327A (en) | 1976-12-15 |
| DE2524750C3 (de) | 1979-02-22 |
| FR2274141A1 (fr) | 1976-01-02 |
| USB476837I5 (enFirst) | 1976-01-20 |
| DE2524750B2 (de) | 1978-06-15 |
| JPS5340872B2 (enFirst) | 1978-10-30 |