JPS5157255A - - Google Patents
Info
- Publication number
- JPS5157255A JPS5157255A JP11352275A JP11352275A JPS5157255A JP S5157255 A JPS5157255 A JP S5157255A JP 11352275 A JP11352275 A JP 11352275A JP 11352275 A JP11352275 A JP 11352275A JP S5157255 A JPS5157255 A JP S5157255A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2445137A DE2445137C3 (de) | 1974-09-20 | 1974-09-20 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE19752505816 DE2505816C3 (de) | 1974-09-20 | 1975-02-12 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE2513207A DE2513207C2 (de) | 1974-09-20 | 1975-03-25 | n-Kanal-Speicher-FET |
DE19752525097 DE2525097C3 (de) | 1975-06-05 | 1975-06-05 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET |
DE19752525062 DE2525062C2 (de) | 1975-06-05 | 1975-06-05 | Matrixanordnung aus n-Kanal-Speicher-FET |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5157255A true JPS5157255A (it) | 1976-05-19 |
Family
ID=27510366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11352275A Pending JPS5157255A (it) | 1974-09-20 | 1975-09-19 |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5157255A (it) |
AT (1) | AT365000B (it) |
AU (1) | AU498494B2 (it) |
BE (1) | BE833633A (it) |
CA (1) | CA1070427A (it) |
CH (1) | CH607233A5 (it) |
DK (1) | DK143923C (it) |
FR (1) | FR2285677A1 (it) |
GB (1) | GB1517927A (it) |
IT (1) | IT1042632B (it) |
NL (1) | NL175561C (it) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
JPS5560469U (it) * | 1978-10-20 | 1980-04-24 | ||
JPS5571072A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor nonvolatile memory |
JPS57160163A (en) * | 1981-03-27 | 1982-10-02 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
JPH04307974A (ja) * | 1991-04-05 | 1992-10-30 | Sharp Corp | 電気的消去可能不揮発性半導体記憶装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4173766A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
SE7907193L (sv) * | 1978-09-28 | 1980-03-29 | Rca Corp | Bestendigt minne |
CN111739572A (zh) * | 2019-03-25 | 2020-10-02 | 亿而得微电子股份有限公司 | 电子写入可擦除可重写只读存储器的低压快速擦除方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915380A (it) * | 1972-05-18 | 1974-02-09 |
-
1975
- 1975-08-21 AT AT0646575A patent/AT365000B/de not_active IP Right Cessation
- 1975-09-09 GB GB3698375A patent/GB1517927A/en not_active Expired
- 1975-09-11 CA CA235,230A patent/CA1070427A/en not_active Expired
- 1975-09-12 AU AU84797/75A patent/AU498494B2/en not_active Expired
- 1975-09-16 FR FR7528356A patent/FR2285677A1/fr active Granted
- 1975-09-16 CH CH1198075A patent/CH607233A5/xx not_active IP Right Cessation
- 1975-09-18 DK DK419975A patent/DK143923C/da not_active IP Right Cessation
- 1975-09-18 NL NL7511017A patent/NL175561C/xx not_active IP Right Cessation
- 1975-09-18 IT IT2734475A patent/IT1042632B/it active
- 1975-09-19 BE BE160218A patent/BE833633A/xx not_active IP Right Cessation
- 1975-09-19 JP JP11352275A patent/JPS5157255A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915380A (it) * | 1972-05-18 | 1974-02-09 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
JPS6252475B2 (it) * | 1977-04-04 | 1987-11-05 | Kogyo Gijutsuin | |
JPS5560469U (it) * | 1978-10-20 | 1980-04-24 | ||
JPS5571072A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor nonvolatile memory |
JPS57160163A (en) * | 1981-03-27 | 1982-10-02 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
JPH0258788B2 (it) * | 1981-10-14 | 1990-12-10 | Kogyo Gijutsu Incho | |
JPH04307974A (ja) * | 1991-04-05 | 1992-10-30 | Sharp Corp | 電気的消去可能不揮発性半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
BE833633A (fr) | 1976-03-19 |
FR2285677A1 (fr) | 1976-04-16 |
ATA646575A (de) | 1981-04-15 |
IT1042632B (it) | 1980-01-30 |
DK419975A (da) | 1976-03-21 |
AT365000B (de) | 1981-11-25 |
AU8479775A (en) | 1977-03-17 |
DK143923B (da) | 1981-10-26 |
FR2285677B1 (it) | 1981-05-29 |
NL175561B (nl) | 1984-06-18 |
DK143923C (da) | 1982-04-19 |
AU498494B2 (en) | 1979-03-15 |
CA1070427A (en) | 1980-01-22 |
CH607233A5 (it) | 1978-11-30 |
NL7511017A (nl) | 1976-03-23 |
NL175561C (nl) | 1984-11-16 |
GB1517927A (en) | 1978-07-19 |