JPS5144391B1 - - Google Patents

Info

Publication number
JPS5144391B1
JPS5144391B1 JP42024517A JP2451767A JPS5144391B1 JP S5144391 B1 JPS5144391 B1 JP S5144391B1 JP 42024517 A JP42024517 A JP 42024517A JP 2451767 A JP2451767 A JP 2451767A JP S5144391 B1 JPS5144391 B1 JP S5144391B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP42024517A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP42024517A priority Critical patent/JPS5144391B1/ja
Priority to GB1228903D priority patent/GB1228903A/en
Priority to US722345A priority patent/US3566214A/en
Publication of JPS5144391B1 publication Critical patent/JPS5144391B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/901—Masterslice integrated circuits comprising bipolar technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP42024517A 1967-04-19 1967-04-19 Pending JPS5144391B1 (enExample)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP42024517A JPS5144391B1 (enExample) 1967-04-19 1967-04-19
GB1228903D GB1228903A (enExample) 1967-04-19 1968-04-17
US722345A US3566214A (en) 1967-04-19 1968-04-18 Integrated circuit having a plurality of circuit element regions and conducting layers extending on both of the opposed common major surfaces of said circuit element regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP42024517A JPS5144391B1 (enExample) 1967-04-19 1967-04-19

Publications (1)

Publication Number Publication Date
JPS5144391B1 true JPS5144391B1 (enExample) 1976-11-27

Family

ID=12140349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP42024517A Pending JPS5144391B1 (enExample) 1967-04-19 1967-04-19

Country Status (3)

Country Link
US (1) US3566214A (enExample)
JP (1) JPS5144391B1 (enExample)
GB (1) GB1228903A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189342A (en) * 1971-10-07 1980-02-19 U.S. Philips Corporation Semiconductor device comprising projecting contact layers
US3913216A (en) * 1973-06-20 1975-10-21 Signetics Corp Method for fabricating a precision aligned semiconductor array
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
IT1094517B (it) 1978-04-28 1985-08-02 Componenti Elettronici Sgs Ate Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
US4379307A (en) * 1980-06-16 1983-04-05 Rockwell International Corporation Integrated circuit chip transmission line
US4733290A (en) * 1986-04-18 1988-03-22 M/A-Com, Inc. Semiconductor device and method of fabrication
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US5084323A (en) * 1989-04-07 1992-01-28 Nippondenso Co., Ltd. Ceramic multi-layer wiring substrate and process for preparation thereof
DE4135654A1 (de) * 1991-10-29 2003-03-27 Lockheed Corp Dichtgepackte Verbindungsstruktur, die eine Abstandshalterstruktur und einen Zwischenraum enthält
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5592022A (en) * 1992-05-27 1997-01-07 Chipscale, Inc. Fabricating a semiconductor with an insulative coating
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts
GB2302452B (en) * 1994-06-09 1998-11-18 Chipscale Inc Resistor fabrication
US5552326A (en) * 1995-03-01 1996-09-03 Texas Instruments Incorporated Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy
CN101421842A (zh) * 2006-01-31 2009-04-29 固态冷却公司 高冷却率应用的热二极管式器件及其制造方法
JP5358089B2 (ja) * 2007-12-21 2013-12-04 スパンション エルエルシー 半導体装置
US8580675B2 (en) 2011-03-02 2013-11-12 Texas Instruments Incorporated Two-track cross-connect in double-patterned structure using rectangular via

Also Published As

Publication number Publication date
GB1228903A (enExample) 1971-04-21
US3566214A (en) 1971-02-23

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