JPS5143718U - - Google Patents

Info

Publication number
JPS5143718U
JPS5143718U JP11668374U JP11668374U JPS5143718U JP S5143718 U JPS5143718 U JP S5143718U JP 11668374 U JP11668374 U JP 11668374U JP 11668374 U JP11668374 U JP 11668374U JP S5143718 U JPS5143718 U JP S5143718U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11668374U
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11668374U priority Critical patent/JPS5143718U/ja
Publication of JPS5143718U publication Critical patent/JPS5143718U/ja
Pending legal-status Critical Current

Links

JP11668374U 1974-09-27 1974-09-27 Pending JPS5143718U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11668374U JPS5143718U (ja) 1974-09-27 1974-09-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11668374U JPS5143718U (ja) 1974-09-27 1974-09-27

Publications (1)

Publication Number Publication Date
JPS5143718U true JPS5143718U (ja) 1976-03-31

Family

ID=28351162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11668374U Pending JPS5143718U (ja) 1974-09-27 1974-09-27

Country Status (1)

Country Link
JP (1) JPS5143718U (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710919A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp High pressure heating device
JPS5842225A (ja) * 1981-09-04 1983-03-11 Kokusai Electric Co Ltd 外熱形の横型半導体気相成長装置
JPS58206089A (ja) * 1982-05-25 1983-12-01 レイデイアント・テクノロジ−・コ−ポレイシヨン 赤外線炉
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS59147428A (ja) * 1983-02-10 1984-08-23 Nippon Telegr & Teleph Corp <Ntt> 半導体気相成長装置の反応炉
JPS59161825A (ja) * 1983-03-07 1984-09-12 Mitsubishi Electric Corp 半導体素子の製造方法
JPS6027121A (ja) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置
JPS6050918A (ja) * 1983-08-31 1985-03-22 Wakomu:Kk 半導体処理装置
JPS6089920A (ja) * 1983-08-11 1985-05-20 ジエニアス　インコ−ポレイテツド 蒸気沈積装置
JPS6118124A (ja) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6118125A (ja) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS62216223A (ja) * 1987-02-24 1987-09-22 Semiconductor Energy Lab Co Ltd 半導体処理装置
JPH05190473A (ja) * 1992-06-03 1993-07-30 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710919A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp High pressure heating device
JPS5842225A (ja) * 1981-09-04 1983-03-11 Kokusai Electric Co Ltd 外熱形の横型半導体気相成長装置
JPS58206089A (ja) * 1982-05-25 1983-12-01 レイデイアント・テクノロジ−・コ−ポレイシヨン 赤外線炉
JPH0436449B2 (ja) * 1982-09-20 1992-06-16 Handotai Energy Kenkyusho
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS59147428A (ja) * 1983-02-10 1984-08-23 Nippon Telegr & Teleph Corp <Ntt> 半導体気相成長装置の反応炉
JPS59161825A (ja) * 1983-03-07 1984-09-12 Mitsubishi Electric Corp 半導体素子の製造方法
JPS6027121A (ja) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置
JPH0463536B2 (ja) * 1983-07-22 1992-10-12 Handotai Energy Kenkyusho
JPS6089920A (ja) * 1983-08-11 1985-05-20 ジエニアス　インコ−ポレイテツド 蒸気沈積装置
JPS6050918A (ja) * 1983-08-31 1985-03-22 Wakomu:Kk 半導体処理装置
JPS6118124A (ja) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6118125A (ja) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS62216223A (ja) * 1987-02-24 1987-09-22 Semiconductor Energy Lab Co Ltd 半導体処理装置
JPH0447455B2 (ja) * 1987-02-24 1992-08-04 Handotai Energy Kenkyusho
JPH05190473A (ja) * 1992-06-03 1993-07-30 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置

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