JPS5141954A - 335 zokukagobutsuhandotaino ketsushoseichohoho - Google Patents

335 zokukagobutsuhandotaino ketsushoseichohoho

Info

Publication number
JPS5141954A
JPS5141954A JP49115367A JP11536774A JPS5141954A JP S5141954 A JPS5141954 A JP S5141954A JP 49115367 A JP49115367 A JP 49115367A JP 11536774 A JP11536774 A JP 11536774A JP S5141954 A JPS5141954 A JP S5141954A
Authority
JP
Japan
Prior art keywords
zokukagobutsuhandotaino
ketsushoseichohoho
zokukagobutsuhandotaino ketsushoseichohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49115367A
Other languages
English (en)
Inventor
Chikayuki Ootsubo
Hidejiro Miki
Kyoshi Shirohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP49115367A priority Critical patent/JPS5141954A/ja
Priority to US05/615,882 priority patent/US4004953A/en
Priority to GB4029775A priority patent/GB1473485A/en
Priority to DE2544286A priority patent/DE2544286C3/de
Publication of JPS5141954A publication Critical patent/JPS5141954A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP49115367A 1974-10-07 1974-10-07 335 zokukagobutsuhandotaino ketsushoseichohoho Pending JPS5141954A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP49115367A JPS5141954A (en) 1974-10-07 1974-10-07 335 zokukagobutsuhandotaino ketsushoseichohoho
US05/615,882 US4004953A (en) 1974-10-07 1975-09-23 Method for growing crystals of III-V compound semiconductors
GB4029775A GB1473485A (en) 1974-10-07 1975-10-02 Method for growing crystals of iii-v compound semicon ductors
DE2544286A DE2544286C3 (de) 1974-10-07 1975-10-03 Verfahren zum epitaktischen Abscheiden einer III-V-Halbleiterkristallschicht auf einem Substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49115367A JPS5141954A (en) 1974-10-07 1974-10-07 335 zokukagobutsuhandotaino ketsushoseichohoho

Publications (1)

Publication Number Publication Date
JPS5141954A true JPS5141954A (en) 1976-04-08

Family

ID=14660760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49115367A Pending JPS5141954A (en) 1974-10-07 1974-10-07 335 zokukagobutsuhandotaino ketsushoseichohoho

Country Status (4)

Country Link
US (1) US4004953A (ja)
JP (1) JPS5141954A (ja)
DE (1) DE2544286C3 (ja)
GB (1) GB1473485A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
US4238252A (en) * 1979-07-11 1980-12-09 Hughes Aircraft Company Process for growing indium phosphide of controlled purity
US4253887A (en) * 1979-08-27 1981-03-03 Rca Corporation Method of depositing layers of semi-insulating gallium arsenide
US4263064A (en) * 1980-02-19 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Method of liquid phase epitaxial growth
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
US4745448A (en) * 1985-12-24 1988-05-17 Raytheon Company Semiconductor devices having compensated buffer layers
JPS6452700A (en) * 1987-05-08 1989-02-28 Furukawa Electric Co Ltd Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereof
US5254507A (en) * 1990-03-02 1993-10-19 Nippon Mining Co., Ltd. Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same
US5173127A (en) * 1990-03-02 1992-12-22 Nippon Mining Co., Ltd. Semi-insulating inp single crystals, semiconductor devices having substrates of the crystals and processes for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837396A (ja) * 1971-09-16 1973-06-01
JPS4898774A (ja) * 1972-03-27 1973-12-14

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
US3713900A (en) * 1969-04-02 1973-01-30 C Suzuki Method for making uniform single crystal semiconductors epitaxially

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837396A (ja) * 1971-09-16 1973-06-01
JPS4898774A (ja) * 1972-03-27 1973-12-14

Also Published As

Publication number Publication date
DE2544286A1 (de) 1976-04-08
DE2544286C3 (de) 1981-01-22
GB1473485A (en) 1977-05-11
DE2544286B2 (de) 1980-05-08
US4004953A (en) 1977-01-25

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