JPS5125512A - - Google Patents

Info

Publication number
JPS5125512A
JPS5125512A JP49116250A JP11625074A JPS5125512A JP S5125512 A JPS5125512 A JP S5125512A JP 49116250 A JP49116250 A JP 49116250A JP 11625074 A JP11625074 A JP 11625074A JP S5125512 A JPS5125512 A JP S5125512A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49116250A
Other languages
Japanese (ja)
Other versions
JPS5814738B2 (ja
Inventor
Akuinasu Mairusu Tomasu
Edowaado Jinmaa Kaateisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unifrax I LLC
Original Assignee
Carborundum Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carborundum Co filed Critical Carborundum Co
Publication of JPS5125512A publication Critical patent/JPS5125512A/ja
Publication of JPS5814738B2 publication Critical patent/JPS5814738B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/447—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on phosphates, e.g. hydroxyapatite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • H10P32/12—
    • H10P32/171—
    • H10P32/19—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Luminescent Compositions (AREA)
JP49116250A 1974-08-26 1974-10-11 リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ Expired JPS5814738B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/500,765 US3931056A (en) 1974-08-26 1974-08-26 Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates

Publications (2)

Publication Number Publication Date
JPS5125512A true JPS5125512A (en:Method) 1976-03-02
JPS5814738B2 JPS5814738B2 (ja) 1983-03-22

Family

ID=23990832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49116250A Expired JPS5814738B2 (ja) 1974-08-26 1974-10-11 リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ

Country Status (6)

Country Link
US (1) US3931056A (en:Method)
JP (1) JPS5814738B2 (en:Method)
CA (1) CA1059158A (en:Method)
DE (1) DE2448258C2 (en:Method)
FR (1) FR2282939A1 (en:Method)
GB (1) GB1517382A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法
JP2003529221A (ja) * 2000-03-29 2003-09-30 テクネグラス，インコーポレイテッド リンによるシリコンのドーピングおよび蒸気の存在下におけるシリコン上への酸化物の成長の方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025464A (en) * 1973-11-01 1977-05-24 Mitsuo Yamashita Composition for diffusing phosphorus
US4033790A (en) * 1976-07-29 1977-07-05 Denki Kagaku Kogyo Kabushiki Kaisha Solid diffusion dopants for semiconductors and method of making the same
US4588455A (en) * 1984-08-15 1986-05-13 Emulsitone Company Planar diffusion source
US4687715A (en) * 1985-07-26 1987-08-18 Westinghouse Electric Corp. Zirconium pyrophosphate matrix layer for electrolyte in a fuel cell
EP0485122A1 (en) * 1990-11-07 1992-05-13 The Carborundum Company Cerium pentaphosphate planar diffusion source for doping at low temperatures
CN102486997B (zh) * 2010-12-01 2014-02-26 天威新能源控股有限公司 一种利用协助磷源气扩散的固态磷源制备pn结的方法
US9196486B2 (en) * 2012-10-26 2015-11-24 Innovalight, Inc. Inorganic phosphate containing doping compositions
RU2567405C2 (ru) * 2014-01-31 2015-11-10 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ получения истоковой области силового транзистора
RU2612043C1 (ru) * 2015-10-21 2017-03-02 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский политехнический университет" Способ легирования полупроводникового кремния фосфором при формировании p-n переходов
CN109608188B (zh) * 2019-01-23 2021-08-10 航天材料及工艺研究所 一种抗烧结焦磷酸锆多孔陶瓷及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99619C (en:Method) * 1955-06-28
US3354005A (en) * 1965-10-23 1967-11-21 Western Electric Co Methods of applying doping compositions to base materials
US3473980A (en) * 1966-10-11 1969-10-21 Bell Telephone Labor Inc Significant impurity sources for solid state diffusion
DE1644003A1 (de) * 1967-04-20 1970-09-24 Siemens Ag Verfahren zum Dotieren von Halbleiterkristallen
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
US3852086A (en) * 1973-06-28 1974-12-03 Carborundum Co Solid diffusion sources for phosphorus doping

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法
JP2003529221A (ja) * 2000-03-29 2003-09-30 テクネグラス，インコーポレイテッド リンによるシリコンのドーピングおよび蒸気の存在下におけるシリコン上への酸化物の成長の方法

Also Published As

Publication number Publication date
CA1059158A (en) 1979-07-24
DE2448258A1 (de) 1976-03-11
US3931056A (en) 1976-01-06
FR2282939A1 (fr) 1976-03-26
FR2282939B1 (en:Method) 1978-07-21
JPS5814738B2 (ja) 1983-03-22
DE2448258C2 (de) 1983-12-08
GB1517382A (en) 1978-07-12

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