JPS5117871B2 - - Google Patents

Info

Publication number
JPS5117871B2
JPS5117871B2 JP47126830A JP12683072A JPS5117871B2 JP S5117871 B2 JPS5117871 B2 JP S5117871B2 JP 47126830 A JP47126830 A JP 47126830A JP 12683072 A JP12683072 A JP 12683072A JP S5117871 B2 JPS5117871 B2 JP S5117871B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47126830A
Other languages
Japanese (ja)
Other versions
JPS4886473A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4886473A publication Critical patent/JPS4886473A/ja
Publication of JPS5117871B2 publication Critical patent/JPS5117871B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/945Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
JP47126830A 1971-12-20 1972-12-19 Expired JPS5117871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209560A US3808108A (en) 1971-12-20 1971-12-20 Semiconductor device fabrication using nickel to mask cathodic etching

Publications (2)

Publication Number Publication Date
JPS4886473A JPS4886473A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-11-15
JPS5117871B2 true JPS5117871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-05

Family

ID=22779246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47126830A Expired JPS5117871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-20 1972-12-19

Country Status (10)

Country Link
US (1) US3808108A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5117871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE792908A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA956039A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH544409A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2261337B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2164684B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT976112B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL155984B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE381536B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2328284A1 (fr) * 1975-10-15 1977-05-13 Labo Electronique Physique Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
CA1109927A (en) * 1978-06-26 1981-09-29 Edmund T. Marciniec Manufacture of thin film thermal print head
US4206541A (en) * 1978-06-26 1980-06-10 Extel Corporation Method of manufacturing thin film thermal print heads
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
US4375390A (en) * 1982-03-15 1983-03-01 Anderson Nathaniel C Thin film techniques for fabricating narrow track ferrite heads
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
EP2267784B1 (en) 2001-07-24 2020-04-29 Cree, Inc. INSULATING GATE AlGaN/GaN HEMT
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US8729156B2 (en) 2009-07-17 2014-05-20 Arkema France Polyhydroxyalkanoate composition exhibiting improved impact resistance at low levels of impact modifier
CN105026099A (zh) * 2012-11-29 2015-11-04 康宁股份有限公司 用于块状金属玻璃的接合方法
TWI733069B (zh) * 2017-12-31 2021-07-11 美商羅門哈斯電子材料有限公司 單體、聚合物及包含其的微影組合物

Also Published As

Publication number Publication date
IT976112B (it) 1974-08-20
CH544409A (de) 1973-11-15
FR2164684A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-08-03
FR2164684B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-04-08
NL155984B (nl) 1978-02-15
SE381536B (sv) 1975-12-08
DE2261337B2 (de) 1977-09-15
JPS4886473A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-11-15
US3808108A (en) 1974-04-30
NL7217010A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-06-22
DE2261337A1 (de) 1973-07-26
CA956039A (en) 1974-10-08
BE792908A (fr) 1973-04-16

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