JPS51138180A - Distributed feedback type semi-conductor laser and the method of manuf acturing it - Google Patents

Distributed feedback type semi-conductor laser and the method of manuf acturing it

Info

Publication number
JPS51138180A
JPS51138180A JP50061826A JP6182675A JPS51138180A JP S51138180 A JPS51138180 A JP S51138180A JP 50061826 A JP50061826 A JP 50061826A JP 6182675 A JP6182675 A JP 6182675A JP S51138180 A JPS51138180 A JP S51138180A
Authority
JP
Japan
Prior art keywords
distributed feedback
feedback type
type semi
conductor laser
manuf acturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50061826A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5410435B2 (sv
Inventor
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP50061826A priority Critical patent/JPS51138180A/ja
Publication of JPS51138180A publication Critical patent/JPS51138180A/ja
Publication of JPS5410435B2 publication Critical patent/JPS5410435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP50061826A 1975-05-26 1975-05-26 Distributed feedback type semi-conductor laser and the method of manuf acturing it Granted JPS51138180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50061826A JPS51138180A (en) 1975-05-26 1975-05-26 Distributed feedback type semi-conductor laser and the method of manuf acturing it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50061826A JPS51138180A (en) 1975-05-26 1975-05-26 Distributed feedback type semi-conductor laser and the method of manuf acturing it

Publications (2)

Publication Number Publication Date
JPS51138180A true JPS51138180A (en) 1976-11-29
JPS5410435B2 JPS5410435B2 (sv) 1979-05-07

Family

ID=13182272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50061826A Granted JPS51138180A (en) 1975-05-26 1975-05-26 Distributed feedback type semi-conductor laser and the method of manuf acturing it

Country Status (1)

Country Link
JP (1) JPS51138180A (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63502472A (ja) * 1986-02-11 1988-09-14 マックス・プランク・ゲゼルシャフト　ツ−ル　フェ−ルデルンク　デア　ビッセンシャフテン　エ−　ファウ 三次元半導体構造を生成するための液相エピタキシャル法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502884A (sv) * 1973-05-09 1975-01-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502884A (sv) * 1973-05-09 1975-01-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63502472A (ja) * 1986-02-11 1988-09-14 マックス・プランク・ゲゼルシャフト　ツ−ル　フェ−ルデルンク　デア　ビッセンシャフテン　エ−　ファウ 三次元半導体構造を生成するための液相エピタキシャル法

Also Published As

Publication number Publication date
JPS5410435B2 (sv) 1979-05-07

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