JPS51134075A - Method to manufacture the semiconductor unit - Google Patents

Method to manufacture the semiconductor unit

Info

Publication number
JPS51134075A
JPS51134075A JP50058201A JP5820175A JPS51134075A JP S51134075 A JPS51134075 A JP S51134075A JP 50058201 A JP50058201 A JP 50058201A JP 5820175 A JP5820175 A JP 5820175A JP S51134075 A JPS51134075 A JP S51134075A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor unit
bulk
transistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50058201A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5711151B2 (online.php
Inventor
Hajime Kamioka
Mikio Takagi
Haruo Shimoda
Kazufumi Nakayama
Takaharu Nawata
Chiaki Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50058201A priority Critical patent/JPS51134075A/ja
Publication of JPS51134075A publication Critical patent/JPS51134075A/ja
Publication of JPS5711151B2 publication Critical patent/JPS5711151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50058201A 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit Granted JPS51134075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50058201A JPS51134075A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50058201A JPS51134075A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Publications (2)

Publication Number Publication Date
JPS51134075A true JPS51134075A (en) 1976-11-20
JPS5711151B2 JPS5711151B2 (online.php) 1982-03-02

Family

ID=13077407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50058201A Granted JPS51134075A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Country Status (1)

Country Link
JP (1) JPS51134075A (online.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201070A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Semiconductor device
JPH06101470B2 (ja) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201070A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Semiconductor device
JPH06101470B2 (ja) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置

Also Published As

Publication number Publication date
JPS5711151B2 (online.php) 1982-03-02

Similar Documents

Publication Publication Date Title
JPS51123591A (en) Method of producing solar battery semiconductor
JPS5228887A (en) Semiconductive emitter device
ZA705583B (en) Method for increasing the output of an electron accelerator
JPS51112187A (en) Processing method of semiconductor equipment
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5214345A (en) Transistor sparking circuit
JPS5751928B2 (online.php)
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS51138394A (en) Semiconductor device
JPS53123673A (en) Manufacture of semiconductor device
JPS5219081A (en) Production method of semiconductor device
JPS5295161A (en) Anode cap producing for crt
JPS5216956A (en) Self-bias type amplifier
JPS5227281A (en) Semiconductor manufacturing process
JPS5316585A (en) Semiconductor device
JPS5344182A (en) Semiconductor device
JPS51138175A (en) Method of manufacturing charge coupled device
JPS5565460A (en) Method of manufacturing semiconductor device improved in current gain
JPS51123569A (en) Semiconductor manufacturing method
JPS5344181A (en) Production of semiconductor device
JPS5353255A (en) Manufacture of semiconductor device
JPS5250691A (en) Production of charge coupled device
JPS5367335A (en) Integrated circuit formation current matching circuit
JPS52104072A (en) High voltage semiconductor device
JPS51141583A (en) Method for producing an electrode for use semiconductor units