JPS51130171A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51130171A JPS51130171A JP5494375A JP5494375A JPS51130171A JP S51130171 A JPS51130171 A JP S51130171A JP 5494375 A JP5494375 A JP 5494375A JP 5494375 A JP5494375 A JP 5494375A JP S51130171 A JPS51130171 A JP S51130171A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- junction
- layer containing
- greatly improve
- containing oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5494375A JPS51130171A (en) | 1975-05-07 | 1975-05-07 | Semiconductor device |
US05/857,284 US4176372A (en) | 1974-03-30 | 1977-12-05 | Semiconductor device having oxygen doped polycrystalline passivation layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5494375A JPS51130171A (en) | 1975-05-07 | 1975-05-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51130171A true JPS51130171A (en) | 1976-11-12 |
Family
ID=12984716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5494375A Pending JPS51130171A (en) | 1974-03-30 | 1975-05-07 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51130171A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852830A (ja) * | 1981-09-24 | 1983-03-29 | Hitachi Ltd | 高耐圧半導体装置 |
JPS5867031A (ja) * | 1981-09-25 | 1983-04-21 | シ−メンス・アクチエンゲゼルシヤフト | 半導体集積回路とその製造方法 |
JPS58131733A (ja) * | 1982-01-29 | 1983-08-05 | Toshiba Corp | 半導体装置 |
JPS59161864A (ja) * | 1983-03-04 | 1984-09-12 | Fujitsu Ltd | 半導体装置 |
-
1975
- 1975-05-07 JP JP5494375A patent/JPS51130171A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852830A (ja) * | 1981-09-24 | 1983-03-29 | Hitachi Ltd | 高耐圧半導体装置 |
JPS5867031A (ja) * | 1981-09-25 | 1983-04-21 | シ−メンス・アクチエンゲゼルシヤフト | 半導体集積回路とその製造方法 |
JPS58131733A (ja) * | 1982-01-29 | 1983-08-05 | Toshiba Corp | 半導体装置 |
JPS59161864A (ja) * | 1983-03-04 | 1984-09-12 | Fujitsu Ltd | 半導体装置 |
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