JPS51130171A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51130171A
JPS51130171A JP5494375A JP5494375A JPS51130171A JP S51130171 A JPS51130171 A JP S51130171A JP 5494375 A JP5494375 A JP 5494375A JP 5494375 A JP5494375 A JP 5494375A JP S51130171 A JPS51130171 A JP S51130171A
Authority
JP
Japan
Prior art keywords
semiconductor device
junction
layer containing
greatly improve
containing oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5494375A
Other languages
English (en)
Inventor
Takeshi Matsushita
Hisayoshi Yamoto
Yoshiyuki Kawana
Hisao Hayashi
Teruaki Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5494375A priority Critical patent/JPS51130171A/ja
Publication of JPS51130171A publication Critical patent/JPS51130171A/ja
Priority to US05/857,284 priority patent/US4176372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP5494375A 1974-03-30 1975-05-07 Semiconductor device Pending JPS51130171A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5494375A JPS51130171A (en) 1975-05-07 1975-05-07 Semiconductor device
US05/857,284 US4176372A (en) 1974-03-30 1977-12-05 Semiconductor device having oxygen doped polycrystalline passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5494375A JPS51130171A (en) 1975-05-07 1975-05-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51130171A true JPS51130171A (en) 1976-11-12

Family

ID=12984716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5494375A Pending JPS51130171A (en) 1974-03-30 1975-05-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51130171A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852830A (ja) * 1981-09-24 1983-03-29 Hitachi Ltd 高耐圧半導体装置
JPS5867031A (ja) * 1981-09-25 1983-04-21 シ−メンス・アクチエンゲゼルシヤフト 半導体集積回路とその製造方法
JPS58131733A (ja) * 1982-01-29 1983-08-05 Toshiba Corp 半導体装置
JPS59161864A (ja) * 1983-03-04 1984-09-12 Fujitsu Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852830A (ja) * 1981-09-24 1983-03-29 Hitachi Ltd 高耐圧半導体装置
JPS5867031A (ja) * 1981-09-25 1983-04-21 シ−メンス・アクチエンゲゼルシヤフト 半導体集積回路とその製造方法
JPS58131733A (ja) * 1982-01-29 1983-08-05 Toshiba Corp 半導体装置
JPS59161864A (ja) * 1983-03-04 1984-09-12 Fujitsu Ltd 半導体装置

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS51123562A (en) Production method of semiconductor device
JPS5228281A (en) Light emitting semiconductor device
JPS51130171A (en) Semiconductor device
JPS5251955A (en) Optical semiconductor device
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS5244574A (en) Semiconductor device
JPS51138394A (en) Semiconductor device
SU511896A1 (ru) Кассета дл се нцев посадочной машины
JPS5220769A (en) Longitudinal semi-conductor unit
JPS51122382A (en) Semiconductor device
JPS51140490A (en) Lateral transistor
JPS51151121A (en) Speaker
JPS5265667A (en) Semiconductor device
JPS5338247A (en) Current-voltage converter circuit
JPS51128264A (en) A semiconductor device
JPS51126891A (en) Ion selective electrode with semiconductor crystal as the sensitive el ement
JPS528783A (en) Semconductor resistance devices
JPS5373980A (en) Semiconductor device and its manufacture
JPS5332682A (en) Semiconductor device
JPS5344182A (en) Semiconductor device
JPS51115776A (en) Glass-bond-type semiconductor element
JPS5230183A (en) Mos semiconductor device and process for producing it
JPS538086A (en) Iil type semiconductor device