JPS51129145A - Charge regenerative device for semiconductor charge transfer element - Google Patents

Charge regenerative device for semiconductor charge transfer element

Info

Publication number
JPS51129145A
JPS51129145A JP51043797A JP4379776A JPS51129145A JP S51129145 A JPS51129145 A JP S51129145A JP 51043797 A JP51043797 A JP 51043797A JP 4379776 A JP4379776 A JP 4379776A JP S51129145 A JPS51129145 A JP S51129145A
Authority
JP
Japan
Prior art keywords
charge
transfer element
regenerative device
semiconductor
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51043797A
Other languages
English (en)
Japanese (ja)
Inventor
Mohamedo Moosen Amuru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS51129145A publication Critical patent/JPS51129145A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP51043797A 1975-04-18 1976-04-19 Charge regenerative device for semiconductor charge transfer element Pending JPS51129145A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/569,580 US3986059A (en) 1975-04-18 1975-04-18 Electrically pulsed charge regenerator for semiconductor charge coupled devices

Publications (1)

Publication Number Publication Date
JPS51129145A true JPS51129145A (en) 1976-11-10

Family

ID=24276012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51043797A Pending JPS51129145A (en) 1975-04-18 1976-04-19 Charge regenerative device for semiconductor charge transfer element

Country Status (6)

Country Link
US (1) US3986059A (OSRAM)
JP (1) JPS51129145A (OSRAM)
DE (1) DE2616476A1 (OSRAM)
FR (1) FR2308166A1 (OSRAM)
GB (1) GB1531042A (OSRAM)
NL (1) NL7603910A (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980902A (en) * 1975-06-30 1976-09-14 Honeywell Information Systems, Inc. Charge injectors for CCD registers
DE2539205A1 (de) * 1975-09-03 1977-03-17 Siemens Ag Regenerierverstaerker fuer ladungsverschiebeanordnungen
DE2541662A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsverschiebeanordnungen
DE2541686A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsgekoppelte elemente
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
NL186416C (nl) * 1981-06-05 1990-11-16 Philips Nv Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3789247A (en) * 1972-07-03 1974-01-29 Ibm Dynamically ordered bidirectional shift register having charge coupled devices
US3819954A (en) * 1973-02-01 1974-06-25 Gen Electric Signal level shift compensation in chargetransfer delay line circuits
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices

Also Published As

Publication number Publication date
FR2308166B1 (OSRAM) 1981-07-31
US3986059A (en) 1976-10-12
FR2308166A1 (fr) 1976-11-12
NL7603910A (nl) 1976-10-20
DE2616476A1 (de) 1976-10-28
GB1531042A (en) 1978-11-01

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