JPS51126324A - Producing method of silicon chips in sheet form - Google Patents
Producing method of silicon chips in sheet formInfo
- Publication number
- JPS51126324A JPS51126324A JP51019805A JP1980576A JPS51126324A JP S51126324 A JPS51126324 A JP S51126324A JP 51019805 A JP51019805 A JP 51019805A JP 1980576 A JP1980576 A JP 1980576A JP S51126324 A JPS51126324 A JP S51126324A
- Authority
- JP
- Japan
- Prior art keywords
- sheet form
- producing method
- silicon chips
- chips
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Continuous Casting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752508369 DE2508369A1 (de) | 1975-02-26 | 1975-02-26 | Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51126324A true JPS51126324A (en) | 1976-11-04 |
JPS581044B2 JPS581044B2 (ja) | 1983-01-10 |
Family
ID=5939886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51019805A Expired JPS581044B2 (ja) | 1975-02-26 | 1976-02-25 | 板状シリコン片の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4108714A (ja) |
JP (1) | JPS581044B2 (ja) |
BR (1) | BR7508284A (ja) |
DE (1) | DE2508369A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113610A (en) * | 1979-02-23 | 1980-09-02 | Tdk Corp | Manufacture of silicon thin strip |
JPS5619680A (en) * | 1979-07-25 | 1981-02-24 | Japan Solar Energ Kk | Manufacture of solar cell |
US8677797B2 (en) | 2007-03-20 | 2014-03-25 | Neturen Co., Ltd. | Hollow rack manufacturing method and manufacturing apparatus |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56109893A (en) * | 1980-01-30 | 1981-08-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Single crystal manufacturing apparatus |
DE3017831A1 (de) * | 1980-05-09 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern |
US4515650A (en) * | 1980-05-15 | 1985-05-07 | International Business Machines Corporation | Method for producing large grained semiconductor ribbons |
US4603034A (en) * | 1980-12-12 | 1986-07-29 | Vickery Iii Earle R | Crystal growing system |
US4565600A (en) * | 1981-04-27 | 1986-01-21 | Criceram | Processes for the continuous preparation of single crystals |
DE3226931A1 (de) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern |
DE3331048C1 (de) * | 1983-08-29 | 1985-01-17 | Manfred Dipl.-Phys. 2863 Ritterhude Marondel | Verfahren und Vorrichtung zur Massenproduktion von Silizium-Wafer fuer photovoltaische Energiewandler |
US4607776A (en) * | 1984-08-31 | 1986-08-26 | The Board Of Trustees Of The Leland Stanford, Junior University | Apparatus for translating crystal fibers |
EP0197034A1 (en) * | 1984-10-16 | 1986-10-15 | TODOROF, William J. | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
US6800137B2 (en) | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
JP3586142B2 (ja) * | 1999-07-22 | 2004-11-10 | エヌエッチ・テクノグラス株式会社 | ガラス板の製造方法、ガラス板の製造装置、及び液晶デバイス |
US6402840B1 (en) | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
US8079945B2 (en) | 2004-02-10 | 2011-12-20 | Pactiv Corporation | Fiber-reinforced film processes and films |
EP2057304A2 (en) * | 2006-10-27 | 2009-05-13 | Evergreen Solar Inc. | Method and apparatus for forming a silicon wafer |
WO2009014957A2 (en) * | 2007-07-20 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing cast silicon from seed crystals |
US7888158B1 (en) * | 2009-07-21 | 2011-02-15 | Sears Jr James B | System and method for making a photovoltaic unit |
US20110036531A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
US20110036530A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
US9196775B2 (en) * | 2009-11-13 | 2015-11-24 | Mitsubishi Electric Corporation | Solar battery cell |
CN102906315B (zh) * | 2010-05-31 | 2015-06-24 | 国际商业机器公司 | 制造单晶片 |
JP5669006B2 (ja) * | 2010-10-19 | 2015-02-12 | 日本電気硝子株式会社 | 帯状ガラスフィルム製造方法及び帯状ガラスフィルム製造装置 |
DE102011007149A1 (de) * | 2011-04-11 | 2012-10-11 | Streicher Maschinenbau GmbH & Co. KG | Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur |
US20140099232A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, system for forming same, and method of forming same |
CN118024430A (zh) * | 2021-11-01 | 2024-05-14 | 青岛高测科技股份有限公司 | 硅棒切割系统的切割装置及硅棒切割系统 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930681A (ja) * | 1972-07-24 | 1974-03-19 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1469379A (en) * | 1919-07-07 | 1923-10-02 | Libbeyowens Sheet Glass Compan | Sheet-glass-drawing mechanism |
NL264214A (ja) * | 1960-05-02 | 1900-01-01 | ||
US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
DE1224273B (de) * | 1964-06-23 | 1966-09-08 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DE1220832B (de) * | 1964-09-22 | 1966-07-14 | Siemens Ag | Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze |
US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
US3293002A (en) * | 1965-10-19 | 1966-12-20 | Siemens Ag | Process for producing tape-shaped semiconductor bodies |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
US3617223A (en) * | 1968-05-21 | 1971-11-02 | Texas Instruments Inc | Apparatus for forming monocrystalline ribbons of silicon |
US3701636A (en) * | 1970-09-23 | 1972-10-31 | Tyco Laboratories Inc | Crystal growing apparatus |
DE2138359B2 (de) * | 1971-07-31 | 1973-05-17 | Preussag Ag, 3000 Hannover | Vorrichtung zum ziehen eines stabes |
-
1975
- 1975-02-26 DE DE19752508369 patent/DE2508369A1/de not_active Withdrawn
- 1975-12-15 BR BR7508284*1A patent/BR7508284A/pt unknown
-
1976
- 1976-02-20 US US05/659,958 patent/US4108714A/en not_active Expired - Lifetime
- 1976-02-25 JP JP51019805A patent/JPS581044B2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930681A (ja) * | 1972-07-24 | 1974-03-19 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113610A (en) * | 1979-02-23 | 1980-09-02 | Tdk Corp | Manufacture of silicon thin strip |
JPS5619680A (en) * | 1979-07-25 | 1981-02-24 | Japan Solar Energ Kk | Manufacture of solar cell |
JPS5759676B2 (ja) * | 1979-07-25 | 1982-12-15 | Japan Sooraa Enajii Kk | |
US8677797B2 (en) | 2007-03-20 | 2014-03-25 | Neturen Co., Ltd. | Hollow rack manufacturing method and manufacturing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS581044B2 (ja) | 1983-01-10 |
BR7508284A (pt) | 1976-08-24 |
US4108714A (en) | 1978-08-22 |
DE2508369A1 (de) | 1976-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51126324A (en) | Producing method of silicon chips in sheet form | |
JPS5236477A (en) | Method of producing semiconductor device | |
JPS51135385A (en) | Method of producing semiconductor device | |
JPS525288A (en) | Method of producing ic device | |
JPS51120184A (en) | Method of producing semiconductor device | |
JPS526088A (en) | Method of producing semiconductor device | |
JPS5370668A (en) | Method of forming nntype region in silicon substrate | |
JPS5242382A (en) | Method of forming isolated pocket in semiconductor material | |
JPS525286A (en) | Method of producing ic device | |
JPS5279668A (en) | Method of producing semiconductor device | |
JPS5260579A (en) | Method of producing semiconductor device | |
JPS5267582A (en) | Semiconductor device and method of producing same | |
CS190524B2 (en) | Method of producing laminates | |
JPS525289A (en) | Method of producing ic device | |
JPS5224473A (en) | Method of producing semiconductor element | |
JPS51124386A (en) | Method of producing ic | |
JPS5234682A (en) | Semiconductor device and method of producing same | |
JPS5239386A (en) | Method of producing ic | |
JPS5222484A (en) | Method of producing semiconductor structure | |
JPS529648A (en) | Method of selectively ionnetching silicon | |
GB1552021A (en) | Method of producing semiconductor device | |
JPS5226190A (en) | Semiconductor device and method of producing same | |
JPS5269486A (en) | Method of producing soft multiilayer sheet | |
JPS51121274A (en) | Semiconductor device and method of producing same | |
JPS5272584A (en) | Semiconductor device and method of producing same |