BR7508284A - Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares - Google Patents

Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares

Info

Publication number
BR7508284A
BR7508284A BR7508284*1A BR7508284A BR7508284A BR 7508284 A BR7508284 A BR 7508284A BR 7508284 A BR7508284 A BR 7508284A BR 7508284 A BR7508284 A BR 7508284A
Authority
BR
Brazil
Prior art keywords
silicio
discs
pieces
manufacture
solar cells
Prior art date
Application number
BR7508284*1A
Other languages
English (en)
Inventor
W Keller
K Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BR7508284A publication Critical patent/BR7508284A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Continuous Casting (AREA)
BR7508284*1A 1975-02-26 1975-12-15 Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares BR7508284A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752508369 DE2508369A1 (de) 1975-02-26 1975-02-26 Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen

Publications (1)

Publication Number Publication Date
BR7508284A true BR7508284A (pt) 1976-08-24

Family

ID=5939886

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7508284*1A BR7508284A (pt) 1975-02-26 1975-12-15 Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares

Country Status (4)

Country Link
US (1) US4108714A (pt)
JP (1) JPS581044B2 (pt)
BR (1) BR7508284A (pt)
DE (1) DE2508369A1 (pt)

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* Cited by examiner, † Cited by third party
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JPS55113610A (en) * 1979-02-23 1980-09-02 Tdk Corp Manufacture of silicon thin strip
JPS5619680A (en) * 1979-07-25 1981-02-24 Japan Solar Energ Kk Manufacture of solar cell
JPS56109893A (en) * 1980-01-30 1981-08-31 Kokusai Denshin Denwa Co Ltd <Kdd> Single crystal manufacturing apparatus
DE3017831A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
US4515650A (en) * 1980-05-15 1985-05-07 International Business Machines Corporation Method for producing large grained semiconductor ribbons
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
DE3226931A1 (de) * 1982-07-19 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern
DE3331048C1 (de) * 1983-08-29 1985-01-17 Manfred Dipl.-Phys. 2863 Ritterhude Marondel Verfahren und Vorrichtung zur Massenproduktion von Silizium-Wafer fuer photovoltaische Energiewandler
US4607776A (en) * 1984-08-31 1986-08-26 The Board Of Trustees Of The Leland Stanford, Junior University Apparatus for translating crystal fibers
EP0197034A1 (en) * 1984-10-16 1986-10-15 TODOROF, William J. Multi-layer thin film, flexible silicon alloy photovoltaic cell
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
JP3586142B2 (ja) * 1999-07-22 2004-11-10 エヌエッチ・テクノグラス株式会社 ガラス板の製造方法、ガラス板の製造装置、及び液晶デバイス
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US8079945B2 (en) * 2004-02-10 2011-12-20 Pactiv Corporation Fiber-reinforced film processes and films
US20080102605A1 (en) * 2006-10-27 2008-05-01 Evergreen Solar, Inc. Method and Apparatus for Forming a Silicon Wafer
ATE530267T1 (de) 2007-03-20 2011-11-15 Neturen Co Ltd Herstellungsverfahren einer hohlen zahnstange und vorrichtung zum herstellen einer hohlen zahnstange
KR20100050510A (ko) * 2007-07-20 2010-05-13 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법
US7888158B1 (en) * 2009-07-21 2011-02-15 Sears Jr James B System and method for making a photovoltaic unit
US20110036530A1 (en) * 2009-08-11 2011-02-17 Sears Jr James B System and Method for Integrally Casting Multilayer Metallic Structures
US20110036531A1 (en) * 2009-08-11 2011-02-17 Sears Jr James B System and Method for Integrally Casting Multilayer Metallic Structures
EP2500948A4 (en) * 2009-11-13 2015-10-14 Mitsubishi Electric Corp SOLAR CELL
GB2494565B (en) * 2010-05-31 2014-04-09 Ibm Producing a mono-crystalline sheet
JP5669006B2 (ja) * 2010-10-19 2015-02-12 日本電気硝子株式会社 帯状ガラスフィルム製造方法及び帯状ガラスフィルム製造装置
DE102011007149A1 (de) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
US20140099232A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, system for forming same, and method of forming same
CN118024430A (zh) * 2021-11-01 2024-05-14 青岛高测科技股份有限公司 硅棒切割系统的切割装置及硅棒切割系统

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US1469379A (en) * 1919-07-07 1923-10-02 Libbeyowens Sheet Glass Compan Sheet-glass-drawing mechanism
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3617223A (en) * 1968-05-21 1971-11-02 Texas Instruments Inc Apparatus for forming monocrystalline ribbons of silicon
US3701636A (en) * 1970-09-23 1972-10-31 Tyco Laboratories Inc Crystal growing apparatus
DE2138359B2 (de) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover Vorrichtung zum ziehen eines stabes
JPS4930681A (pt) * 1972-07-24 1974-03-19

Also Published As

Publication number Publication date
JPS581044B2 (ja) 1983-01-10
DE2508369A1 (de) 1976-09-02
JPS51126324A (en) 1976-11-04
US4108714A (en) 1978-08-22

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