BR7508284A - Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares - Google Patents
Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solaresInfo
- Publication number
- BR7508284A BR7508284A BR7508284*1A BR7508284A BR7508284A BR 7508284 A BR7508284 A BR 7508284A BR 7508284 A BR7508284 A BR 7508284A BR 7508284 A BR7508284 A BR 7508284A
- Authority
- BR
- Brazil
- Prior art keywords
- silicio
- discs
- pieces
- manufacture
- solar cells
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Continuous Casting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752508369 DE2508369A1 (de) | 1975-02-26 | 1975-02-26 | Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen |
Publications (1)
Publication Number | Publication Date |
---|---|
BR7508284A true BR7508284A (pt) | 1976-08-24 |
Family
ID=5939886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR7508284*1A BR7508284A (pt) | 1975-02-26 | 1975-12-15 | Processo aperfeicoado para fabricacao de pecas de silicio em forma de discos,especialmente para celulas solares |
Country Status (4)
Country | Link |
---|---|
US (1) | US4108714A (pt) |
JP (1) | JPS581044B2 (pt) |
BR (1) | BR7508284A (pt) |
DE (1) | DE2508369A1 (pt) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113610A (en) * | 1979-02-23 | 1980-09-02 | Tdk Corp | Manufacture of silicon thin strip |
JPS5619680A (en) * | 1979-07-25 | 1981-02-24 | Japan Solar Energ Kk | Manufacture of solar cell |
JPS56109893A (en) * | 1980-01-30 | 1981-08-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Single crystal manufacturing apparatus |
DE3017831A1 (de) * | 1980-05-09 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern |
US4515650A (en) * | 1980-05-15 | 1985-05-07 | International Business Machines Corporation | Method for producing large grained semiconductor ribbons |
US4603034A (en) * | 1980-12-12 | 1986-07-29 | Vickery Iii Earle R | Crystal growing system |
US4565600A (en) * | 1981-04-27 | 1986-01-21 | Criceram | Processes for the continuous preparation of single crystals |
DE3226931A1 (de) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern |
DE3331048C1 (de) * | 1983-08-29 | 1985-01-17 | Manfred Dipl.-Phys. 2863 Ritterhude Marondel | Verfahren und Vorrichtung zur Massenproduktion von Silizium-Wafer fuer photovoltaische Energiewandler |
US4607776A (en) * | 1984-08-31 | 1986-08-26 | The Board Of Trustees Of The Leland Stanford, Junior University | Apparatus for translating crystal fibers |
EP0197034A1 (en) * | 1984-10-16 | 1986-10-15 | TODOROF, William J. | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
US6800137B2 (en) | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
JP3586142B2 (ja) * | 1999-07-22 | 2004-11-10 | エヌエッチ・テクノグラス株式会社 | ガラス板の製造方法、ガラス板の製造装置、及び液晶デバイス |
US6402840B1 (en) | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
US8079945B2 (en) | 2004-02-10 | 2011-12-20 | Pactiv Corporation | Fiber-reinforced film processes and films |
CA2661324A1 (en) * | 2006-10-27 | 2008-05-08 | Evergreen Solar, Inc. | Method and apparatus for forming a silicon wafer |
DE602008001571D1 (de) | 2007-03-20 | 2010-08-05 | Neturen Co Ltd | Herstellungsverfahren einer hohlen Zahnstange und Vorrichtung zum Herstellen einer hohlen Zahnstange |
KR20100050510A (ko) * | 2007-07-20 | 2010-05-13 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 |
US7888158B1 (en) * | 2009-07-21 | 2011-02-15 | Sears Jr James B | System and method for making a photovoltaic unit |
US20110036530A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
US20110036531A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
CN102687279B (zh) * | 2009-11-13 | 2015-08-19 | 三菱电机株式会社 | 太阳能电池单元 |
US9487884B2 (en) | 2010-05-31 | 2016-11-08 | International Business Machines Corporation | Producing a mono-crystalline sheet of semiconductor material |
JP5669006B2 (ja) * | 2010-10-19 | 2015-02-12 | 日本電気硝子株式会社 | 帯状ガラスフィルム製造方法及び帯状ガラスフィルム製造装置 |
DE102011007149A1 (de) * | 2011-04-11 | 2012-10-11 | Streicher Maschinenbau GmbH & Co. KG | Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur |
US20140099232A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, system for forming same, and method of forming same |
CN118024430A (zh) * | 2021-11-01 | 2024-05-14 | 青岛高测科技股份有限公司 | 硅棒切割系统的切割装置及硅棒切割系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1469379A (en) * | 1919-07-07 | 1923-10-02 | Libbeyowens Sheet Glass Compan | Sheet-glass-drawing mechanism |
US3124489A (en) * | 1960-05-02 | 1964-03-10 | Method of continuously growing thin strip crystals | |
US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
DE1224273B (de) * | 1964-06-23 | 1966-09-08 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DE1220832B (de) * | 1964-09-22 | 1966-07-14 | Siemens Ag | Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze |
US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
US3293002A (en) * | 1965-10-19 | 1966-12-20 | Siemens Ag | Process for producing tape-shaped semiconductor bodies |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
US3617223A (en) * | 1968-05-21 | 1971-11-02 | Texas Instruments Inc | Apparatus for forming monocrystalline ribbons of silicon |
US3701636A (en) * | 1970-09-23 | 1972-10-31 | Tyco Laboratories Inc | Crystal growing apparatus |
DE2138359B2 (de) * | 1971-07-31 | 1973-05-17 | Preussag Ag, 3000 Hannover | Vorrichtung zum ziehen eines stabes |
JPS4930681A (pt) * | 1972-07-24 | 1974-03-19 |
-
1975
- 1975-02-26 DE DE19752508369 patent/DE2508369A1/de not_active Withdrawn
- 1975-12-15 BR BR7508284*1A patent/BR7508284A/pt unknown
-
1976
- 1976-02-20 US US05/659,958 patent/US4108714A/en not_active Expired - Lifetime
- 1976-02-25 JP JP51019805A patent/JPS581044B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4108714A (en) | 1978-08-22 |
JPS51126324A (en) | 1976-11-04 |
JPS581044B2 (ja) | 1983-01-10 |
DE2508369A1 (de) | 1976-09-02 |
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