JPS5099272A - - Google Patents
Info
- Publication number
- JPS5099272A JPS5099272A JP10179274A JP10179274A JPS5099272A JP S5099272 A JPS5099272 A JP S5099272A JP 10179274 A JP10179274 A JP 10179274A JP 10179274 A JP10179274 A JP 10179274A JP S5099272 A JPS5099272 A JP S5099272A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42922873A | 1973-12-28 | 1973-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5099272A true JPS5099272A (ja) | 1975-08-06 |
| JPS5828731B2 JPS5828731B2 (ja) | 1983-06-17 |
Family
ID=23702356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49101792A Expired JPS5828731B2 (ja) | 1973-12-28 | 1974-09-04 | ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5828731B2 (ja) |
| DE (1) | DE2460653C2 (ja) |
| FR (1) | FR2256537B1 (ja) |
| GB (1) | GB1494328A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066825A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体装置の製造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
| DE3347997C2 (ja) * | 1982-01-06 | 1991-01-24 | Canon K.K., Tokio/Tokyo, Jp | |
| US5416354A (en) * | 1989-01-06 | 1995-05-16 | Unitrode Corporation | Inverted epitaxial process semiconductor devices |
| DE3922671A1 (de) * | 1989-07-10 | 1991-01-24 | Siemens Ag | Akustoelektronisches bauelement mit einer oberflaechenwellenanordnung und einer elektronischen halbleiterschaltung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936792B1 (ja) * | 1970-10-15 | 1974-10-03 |
-
1974
- 1974-09-04 JP JP49101792A patent/JPS5828731B2/ja not_active Expired
- 1974-12-04 FR FR7439711A patent/FR2256537B1/fr not_active Expired
- 1974-12-04 GB GB5246774A patent/GB1494328A/en not_active Expired
- 1974-12-20 DE DE19742460653 patent/DE2460653C2/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066825A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0324778B2 (ja) * | 1983-09-22 | 1991-04-04 | Tokyo Shibaura Electric Co |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2460653A1 (de) | 1975-07-10 |
| DE2460653C2 (de) | 1986-02-06 |
| GB1494328A (en) | 1977-12-07 |
| FR2256537B1 (ja) | 1979-03-16 |
| JPS5828731B2 (ja) | 1983-06-17 |
| FR2256537A1 (ja) | 1975-07-25 |