JPS4936792B1 - - Google Patents

Info

Publication number
JPS4936792B1
JPS4936792B1 JP45090009A JP9000970A JPS4936792B1 JP S4936792 B1 JPS4936792 B1 JP S4936792B1 JP 45090009 A JP45090009 A JP 45090009A JP 9000970 A JP9000970 A JP 9000970A JP S4936792 B1 JPS4936792 B1 JP S4936792B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45090009A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45090009A priority Critical patent/JPS4936792B1/ja
Priority to GB4746471A priority patent/GB1314648A/en
Priority to US00187946A priority patent/US3767494A/en
Publication of JPS4936792B1 publication Critical patent/JPS4936792B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Light Receiving Elements (AREA)
JP45090009A 1970-10-15 1970-10-15 Pending JPS4936792B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP45090009A JPS4936792B1 (ja) 1970-10-15 1970-10-15
GB4746471A GB1314648A (en) 1970-10-15 1971-10-12 Method for manufacturing a semiconductor photosensitive device
US00187946A US3767494A (en) 1970-10-15 1971-10-12 Method for manufacturing a semiconductor photosensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45090009A JPS4936792B1 (ja) 1970-10-15 1970-10-15

Publications (1)

Publication Number Publication Date
JPS4936792B1 true JPS4936792B1 (ja) 1974-10-03

Family

ID=13986638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45090009A Pending JPS4936792B1 (ja) 1970-10-15 1970-10-15

Country Status (3)

Country Link
US (1) US3767494A (ja)
JP (1) JPS4936792B1 (ja)
GB (1) GB1314648A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327300A (en) * 1976-08-27 1978-03-14 Yoshirou Fujii Lifesaving unit
JPS56125100U (ja) * 1980-02-26 1981-09-24
JP2011029619A (ja) * 2009-06-24 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011066392A (ja) * 2009-06-24 2011-03-31 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011228651A (ja) * 2010-03-30 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
GB1480592A (en) * 1973-11-02 1977-07-20 Marconi Co Ltd Light emitting diodes
JPS5828731B2 (ja) * 1973-12-28 1983-06-17 テキサス インストルメンツ インコ−ポレ−テツド ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ
US4050979A (en) * 1973-12-28 1977-09-27 Texas Instruments Incorporated Process for thinning silicon with special application to producing silicon on insulator
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
US4142926A (en) * 1977-02-24 1979-03-06 Intel Corporation Self-aligning double polycrystalline silicon etching process
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
JPS5839374B2 (ja) * 1978-12-26 1983-08-30 松下電器産業株式会社 半導体基板の処理方法
US4416053A (en) * 1980-03-24 1983-11-22 Hughes Aircraft Company Method of fabricating gallium arsenide burris FET structure for optical detection
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
JPS58138033A (ja) * 1982-02-10 1983-08-16 Toshiba Corp 半導体基板及び半導体装置の製造方法
US4615762A (en) * 1985-04-30 1986-10-07 Rca Corporation Method for thinning silicon
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US4889590A (en) * 1989-04-27 1989-12-26 Motorola Inc. Semiconductor pressure sensor means and method
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
DE4305297C2 (de) * 1993-02-20 1998-09-24 Telefunken Microelectron Strukturbeize für Halbleiter und deren Anwendung
US5968849A (en) * 1995-06-26 1999-10-19 Motorola, Inc. Method for pre-shaping a semiconductor substrate for polishing and structure
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
EP1926132A1 (en) * 2006-11-23 2008-05-28 S.O.I.Tec Silicon on Insulator Technologies Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution
CN102285633B (zh) * 2011-07-04 2014-03-26 上海先进半导体制造股份有限公司 复合集成传感器结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
US3616348A (en) * 1968-06-10 1971-10-26 Rca Corp Process for isolating semiconductor elements

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327300A (en) * 1976-08-27 1978-03-14 Yoshirou Fujii Lifesaving unit
JPS56125100U (ja) * 1980-02-26 1981-09-24
JP2011029619A (ja) * 2009-06-24 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011066392A (ja) * 2009-06-24 2011-03-31 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011228651A (ja) * 2010-03-30 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

Also Published As

Publication number Publication date
US3767494A (en) 1973-10-23
GB1314648A (en) 1973-04-26

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