JPS5096176A - - Google Patents
Info
- Publication number
- JPS5096176A JPS5096176A JP14748374A JP14748374A JPS5096176A JP S5096176 A JPS5096176 A JP S5096176A JP 14748374 A JP14748374 A JP 14748374A JP 14748374 A JP14748374 A JP 14748374A JP S5096176 A JPS5096176 A JP S5096176A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H5/00—Applications of radiation from radioactive sources or arrangements therefor, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732364015 DE2364015C3 (de) | 1973-12-21 | 1973-12-21 | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit einem einstellbaren Dotierungsprofil |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5096176A true JPS5096176A (ja) | 1975-07-31 |
Family
ID=5901661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14748374A Pending JPS5096176A (ja) | 1973-12-21 | 1974-12-20 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5096176A (ja) |
DE (1) | DE2364015C3 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226897A (ja) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | 単結晶の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4836788A (en) * | 1985-11-12 | 1989-06-06 | Sony Corporation | Production of solid-state image pick-up device with uniform distribution of dopants |
JP2635450B2 (ja) * | 1991-03-26 | 1997-07-30 | 信越半導体株式会社 | 中性子照射用原料czシリコン単結晶 |
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1973
- 1973-12-21 DE DE19732364015 patent/DE2364015C3/de not_active Expired
-
1974
- 1974-12-20 JP JP14748374A patent/JPS5096176A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226897A (ja) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | 単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE2364015A1 (de) | 1975-07-03 |
DE2364015C3 (de) | 1982-04-08 |
DE2364015B2 (de) | 1981-02-12 |