JPS50772A - - Google Patents
Info
- Publication number
- JPS50772A JPS50772A JP48125022A JP12502273A JPS50772A JP S50772 A JPS50772 A JP S50772A JP 48125022 A JP48125022 A JP 48125022A JP 12502273 A JP12502273 A JP 12502273A JP S50772 A JPS50772 A JP S50772A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
- H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P90/1906—
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- H10W10/061—
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- H10W10/181—
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- H10W20/40—
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- H10W72/00—
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- H10W72/60—
-
- H10W10/021—
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- H10W10/20—
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Attenuators (AREA)
- Power Conversion In General (AREA)
- Amplitude Modulation (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7215200A NL7215200A (cg-RX-API-DMAC10.html) | 1972-11-10 | 1972-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50772A true JPS50772A (cg-RX-API-DMAC10.html) | 1975-01-07 |
| JPS5227031B2 JPS5227031B2 (cg-RX-API-DMAC10.html) | 1977-07-18 |
Family
ID=19817338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48125022A Expired JPS5227031B2 (cg-RX-API-DMAC10.html) | 1972-11-10 | 1973-11-08 |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US4143383A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5227031B2 (cg-RX-API-DMAC10.html) |
| AT (1) | ATA936373A (cg-RX-API-DMAC10.html) |
| BE (1) | BE807079A (cg-RX-API-DMAC10.html) |
| BR (1) | BR7308693D0 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1006274A (cg-RX-API-DMAC10.html) |
| CH (1) | CH574165A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2353770C3 (cg-RX-API-DMAC10.html) |
| ES (1) | ES420364A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2206589B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1445724A (cg-RX-API-DMAC10.html) |
| IN (1) | IN140549B (cg-RX-API-DMAC10.html) |
| IT (1) | IT996919B (cg-RX-API-DMAC10.html) |
| NL (1) | NL7215200A (cg-RX-API-DMAC10.html) |
| SE (1) | SE391997B (cg-RX-API-DMAC10.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932640A (cg-RX-API-DMAC10.html) * | 1972-07-20 | 1974-03-25 | ||
| JPS60126643A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 印刷媒体 |
| JPS62188282A (ja) * | 1985-08-27 | 1987-08-17 | テイア−ルダブリユ− インコ−ポレ−テツド | モノリシツク装置及びその製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050055A (en) * | 1976-07-26 | 1977-09-20 | Krautkramer-Branson, Incorporated | Attenuator circuit ultrasonic testing |
| US4257061A (en) * | 1977-10-17 | 1981-03-17 | John Fluke Mfg. Co., Inc. | Thermally isolated monolithic semiconductor die |
| US4275362A (en) * | 1979-03-16 | 1981-06-23 | Rca Corporation | Gain controlled amplifier using a pin diode |
| US4500845A (en) * | 1983-03-15 | 1985-02-19 | Texas Instruments Incorporated | Programmable attenuator |
| DE3675611D1 (de) * | 1985-08-31 | 1990-12-20 | Licentia Gmbh | Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers. |
| US4786828A (en) * | 1987-05-15 | 1988-11-22 | Hoffman Charles R | Bias scheme for achieving voltage independent capacitance |
| US6835967B2 (en) * | 2003-03-25 | 2004-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor diodes with fin structure |
| JP2008516441A (ja) * | 2004-10-05 | 2008-05-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス及びその使用 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT270747B (de) * | 1963-12-17 | 1969-05-12 | Western Electric Co | Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben |
| DE1514453A1 (de) * | 1965-04-26 | 1969-08-14 | Siemens Ag | Verfahren zum Herstellen von Halbleiterschaltungen |
| FR1540051A (fr) * | 1966-09-21 | 1968-09-20 | Rca Corp | Microcircuit et son procédé de fabrication |
| US3475700A (en) * | 1966-12-30 | 1969-10-28 | Texas Instruments Inc | Monolithic microwave duplexer switch |
| US3518585A (en) * | 1966-12-30 | 1970-06-30 | Texas Instruments Inc | Voltage controlled a.c. signal attenuator |
| US3549960A (en) * | 1967-12-20 | 1970-12-22 | Massachusetts Inst Technology | Thermo-photovoltaic converter having back-surface junctions |
| DE1937755A1 (de) * | 1968-07-26 | 1970-02-12 | Signetics Corp | Halbleiter-Baugruppe und -Vorrichtung mit ummanteltem Traegerleitungsaufbau und Verfahren zur Herstellung derselben |
| NL159822B (nl) * | 1969-01-02 | 1979-03-15 | Philips Nv | Halfgeleiderinrichting. |
| JPS4828958B1 (cg-RX-API-DMAC10.html) * | 1969-07-22 | 1973-09-06 | ||
| FR2071043A5 (cg-RX-API-DMAC10.html) * | 1969-12-16 | 1971-09-17 | Thomson Csf | |
| US3714473A (en) * | 1971-05-12 | 1973-01-30 | Bell Telephone Labor Inc | Planar semiconductor device utilizing confined charge carrier beams |
| DE2203247C3 (de) * | 1972-01-24 | 1980-02-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb |
-
1972
- 1972-11-10 NL NL7215200A patent/NL7215200A/xx not_active Application Discontinuation
-
1973
- 1973-10-26 DE DE2353770A patent/DE2353770C3/de not_active Expired
- 1973-10-31 IN IN2407/CAL/73A patent/IN140549B/en unknown
- 1973-11-07 AT AT936373A patent/ATA936373A/de not_active Application Discontinuation
- 1973-11-07 BR BR8693/73A patent/BR7308693D0/pt unknown
- 1973-11-07 SE SE7315118A patent/SE391997B/xx unknown
- 1973-11-07 GB GB5162073A patent/GB1445724A/en not_active Expired
- 1973-11-07 CA CA185,225A patent/CA1006274A/en not_active Expired
- 1973-11-07 IT IT70268/73A patent/IT996919B/it active
- 1973-11-07 CH CH1561673A patent/CH574165A5/xx not_active IP Right Cessation
- 1973-11-08 BE BE137545A patent/BE807079A/xx unknown
- 1973-11-08 ES ES420364A patent/ES420364A1/es not_active Expired
- 1973-11-08 JP JP48125022A patent/JPS5227031B2/ja not_active Expired
- 1973-11-09 FR FR7339853A patent/FR2206589B1/fr not_active Expired
-
1976
- 1976-09-23 US US05/725,781 patent/US4143383A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932640A (cg-RX-API-DMAC10.html) * | 1972-07-20 | 1974-03-25 | ||
| JPS60126643A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 印刷媒体 |
| JPS62188282A (ja) * | 1985-08-27 | 1987-08-17 | テイア−ルダブリユ− インコ−ポレ−テツド | モノリシツク装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| ES420364A1 (es) | 1976-04-16 |
| SE391997B (sv) | 1977-03-07 |
| GB1445724A (en) | 1976-08-11 |
| US4143383A (en) | 1979-03-06 |
| NL7215200A (cg-RX-API-DMAC10.html) | 1974-05-14 |
| BR7308693D0 (pt) | 1974-08-22 |
| CA1006274A (en) | 1977-03-01 |
| FR2206589B1 (cg-RX-API-DMAC10.html) | 1978-02-24 |
| DE2353770B2 (de) | 1981-07-16 |
| BE807079A (nl) | 1974-05-08 |
| IT996919B (it) | 1975-12-10 |
| IN140549B (cg-RX-API-DMAC10.html) | 1976-11-27 |
| DE2353770C3 (de) | 1982-03-25 |
| CH574165A5 (cg-RX-API-DMAC10.html) | 1976-03-31 |
| AU6232073A (en) | 1975-05-15 |
| JPS5227031B2 (cg-RX-API-DMAC10.html) | 1977-07-18 |
| FR2206589A1 (cg-RX-API-DMAC10.html) | 1974-06-07 |
| DE2353770A1 (de) | 1974-05-16 |
| ATA936373A (de) | 1979-06-15 |