JPS5075771A - - Google Patents
Info
- Publication number
- JPS5075771A JPS5075771A JP49113976A JP11397674A JPS5075771A JP S5075771 A JPS5075771 A JP S5075771A JP 49113976 A JP49113976 A JP 49113976A JP 11397674 A JP11397674 A JP 11397674A JP S5075771 A JPS5075771 A JP S5075771A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/116—Oxidation, differential
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US411518A US3899372A (en) | 1973-10-31 | 1973-10-31 | Process for controlling insulating film thickness across a semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5075771A true JPS5075771A (ja) | 1975-06-21 |
JPS5653213B2 JPS5653213B2 (ja) | 1981-12-17 |
Family
ID=23629264
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11397674A Expired JPS5653213B2 (ja) | 1973-10-31 | 1974-10-04 | |
JP12074180A Granted JPS5635427A (en) | 1973-10-31 | 1980-09-02 | Method of manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12074180A Granted JPS5635427A (en) | 1973-10-31 | 1980-09-02 | Method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US3899372A (ja) |
JP (2) | JPS5653213B2 (ja) |
DE (1) | DE2445879C2 (ja) |
FR (1) | FR2250199B1 (ja) |
GB (1) | GB1481196A (ja) |
IT (1) | IT1022974B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228276A (en) * | 1975-06-30 | 1977-03-03 | Ibm | Method of producing semiconductor device |
JPS5550641A (en) * | 1978-10-05 | 1980-04-12 | Nec Corp | Semiconductor device |
JPS5651870A (en) * | 1979-10-05 | 1981-05-09 | Oki Electric Ind Co Ltd | Manufacture of complementary type mos semiconductor device |
JP2010516322A (ja) * | 2007-01-22 | 2010-05-20 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ロボット・クリーニングヘッド |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3968562A (en) * | 1971-11-25 | 1976-07-13 | U.S. Philips Corporation | Method of manufacturing a semiconductor device |
DE2409910C3 (de) * | 1974-03-01 | 1979-03-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer Halbleiteranordnung |
JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
US4056825A (en) * | 1975-06-30 | 1977-11-01 | International Business Machines Corporation | FET device with reduced gate overlap capacitance of source/drain and method of manufacture |
US4049477A (en) * | 1976-03-02 | 1977-09-20 | Hewlett-Packard Company | Method for fabricating a self-aligned metal oxide field effect transistor |
DE2803431A1 (de) * | 1978-01-26 | 1979-08-02 | Siemens Ag | Verfahren zur herstellung von mos-transistoren |
US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
US4304042A (en) * | 1978-11-13 | 1981-12-08 | Xerox Corporation | Self-aligned MESFETs having reduced series resistance |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
DE3318213A1 (de) * | 1983-05-19 | 1984-11-22 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten |
US4635344A (en) * | 1984-08-20 | 1987-01-13 | Texas Instruments Incorporated | Method of low encroachment oxide isolation of a semiconductor device |
US4737828A (en) * | 1986-03-17 | 1988-04-12 | General Electric Company | Method for gate electrode fabrication and symmetrical and non-symmetrical self-aligned inlay transistors made therefrom |
JP2609619B2 (ja) * | 1987-08-25 | 1997-05-14 | 三菱電機株式会社 | 半導体装置 |
US5817581A (en) * | 1995-04-21 | 1998-10-06 | International Business Machines Corporation | Process for the creation of a thermal SiO2 layer with extremely uniform layer thickness |
US6214127B1 (en) | 1998-02-04 | 2001-04-10 | Micron Technology, Inc. | Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier |
US6440382B1 (en) * | 1999-08-31 | 2002-08-27 | Micron Technology, Inc. | Method for producing water for use in manufacturing semiconductors |
CN102034706B (zh) * | 2009-09-29 | 2012-03-21 | 上海华虹Nec电子有限公司 | 控制硅锗合金刻面生长效果的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1103542A (en) * | 1963-08-23 | 1968-02-14 | Plessey Uk Ltd | Improvements in or relating to semiconductor devices |
US3473093A (en) * | 1965-08-18 | 1969-10-14 | Ibm | Semiconductor device having compensated barrier zones between n-p junctions |
US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
US3756876A (en) * | 1970-10-27 | 1973-09-04 | Cogar Corp | Fabrication process for field effect and bipolar transistor devices |
JPS5415663B2 (ja) * | 1971-12-29 | 1979-06-16 |
-
1973
- 1973-10-31 US US411518A patent/US3899372A/en not_active Expired - Lifetime
-
1974
- 1974-09-02 FR FR7430669A patent/FR2250199B1/fr not_active Expired
- 1974-09-26 DE DE2445879A patent/DE2445879C2/de not_active Expired
- 1974-10-04 JP JP11397674A patent/JPS5653213B2/ja not_active Expired
- 1974-10-11 GB GB44122/74A patent/GB1481196A/en not_active Expired
- 1974-10-18 IT IT28569/74A patent/IT1022974B/it active
-
1980
- 1980-09-02 JP JP12074180A patent/JPS5635427A/ja active Granted
Non-Patent Citations (2)
Title |
---|
PHILIPS RES. REPTS#V25=1970 * |
PHILIPS RES. REPTS#V26=1971 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228276A (en) * | 1975-06-30 | 1977-03-03 | Ibm | Method of producing semiconductor device |
JPS5550641A (en) * | 1978-10-05 | 1980-04-12 | Nec Corp | Semiconductor device |
JPS5651870A (en) * | 1979-10-05 | 1981-05-09 | Oki Electric Ind Co Ltd | Manufacture of complementary type mos semiconductor device |
JP2010516322A (ja) * | 2007-01-22 | 2010-05-20 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ロボット・クリーニングヘッド |
Also Published As
Publication number | Publication date |
---|---|
FR2250199B1 (ja) | 1978-12-29 |
US3899372A (en) | 1975-08-12 |
JPS5635427A (en) | 1981-04-08 |
JPS5745059B2 (ja) | 1982-09-25 |
GB1481196A (en) | 1977-07-27 |
IT1022974B (it) | 1978-04-20 |
DE2445879C2 (de) | 1982-06-09 |
JPS5653213B2 (ja) | 1981-12-17 |
DE2445879A1 (de) | 1975-05-07 |
FR2250199A1 (ja) | 1975-05-30 |