JPS5068286A - - Google Patents

Info

Publication number
JPS5068286A
JPS5068286A JP48115821A JP11582173A JPS5068286A JP S5068286 A JPS5068286 A JP S5068286A JP 48115821 A JP48115821 A JP 48115821A JP 11582173 A JP11582173 A JP 11582173A JP S5068286 A JPS5068286 A JP S5068286A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48115821A
Other versions
JPS5214594B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48115821A priority Critical patent/JPS5214594B2/ja
Priority to US05/495,789 priority patent/US3933540A/en
Publication of JPS5068286A publication Critical patent/JPS5068286A/ja
Publication of JPS5214594B2 publication Critical patent/JPS5214594B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H10P14/61—
    • H10P95/00—
    • H10W10/012—
    • H10W10/13—
    • H10W15/00—
    • H10W15/01—
    • H10W20/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP48115821A 1973-10-17 1973-10-17 Expired JPS5214594B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP48115821A JPS5214594B2 (ja) 1973-10-17 1973-10-17
US05/495,789 US3933540A (en) 1973-10-17 1974-08-08 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48115821A JPS5214594B2 (ja) 1973-10-17 1973-10-17

Publications (2)

Publication Number Publication Date
JPS5068286A true JPS5068286A (ja) 1975-06-07
JPS5214594B2 JPS5214594B2 (ja) 1977-04-22

Family

ID=14671927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48115821A Expired JPS5214594B2 (ja) 1973-10-17 1973-10-17

Country Status (2)

Country Link
US (1) US3933540A (ja)
JP (1) JPS5214594B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153345A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Manufacture of semiconductor device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation
JPS5275989A (en) 1975-12-22 1977-06-25 Hitachi Ltd Production of semiconductor device
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Ｍｏｓ集積回路の製造方法
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
JPS6035818B2 (ja) * 1976-09-22 1985-08-16 日本電気株式会社 半導体装置の製造方法
DE2728845A1 (de) * 1977-06-27 1979-01-18 Siemens Ag Verfahren zum herstellen eines hochfrequenztransistors
US4219369A (en) * 1977-09-30 1980-08-26 Hitachi, Ltd. Method of making semiconductor integrated circuit device
JPS5555559A (en) * 1978-10-19 1980-04-23 Toshiba Corp Method of fabricating semiconductor device
JPS55153342A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Semiconductor device and its manufacture
EP0215213A1 (en) * 1985-09-16 1987-03-25 Tektronix, Inc. Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness
US4819049A (en) * 1985-09-16 1989-04-04 Tektronix, Inc. Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness
US4903107A (en) * 1986-12-29 1990-02-20 General Electric Company Buried oxide field isolation structure with composite dielectric
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices
US3659160A (en) * 1970-02-13 1972-04-25 Texas Instruments Inc Integrated circuit process utilizing orientation dependent silicon etch
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153345A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5214594B2 (ja) 1977-04-22
US3933540A (en) 1976-01-20

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