JPS5057779A - - Google Patents
Info
- Publication number
- JPS5057779A JPS5057779A JP10679373A JP10679373A JPS5057779A JP S5057779 A JPS5057779 A JP S5057779A JP 10679373 A JP10679373 A JP 10679373A JP 10679373 A JP10679373 A JP 10679373A JP S5057779 A JPS5057779 A JP S5057779A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679373A JPS5613029B2 (en) | 1973-09-21 | 1973-09-21 | |
| GB3924474A GB1474745A (en) | 1973-09-21 | 1974-09-09 | Nonvolatile semiconductor memory |
| CA208,942A CA1060993A (en) | 1973-09-21 | 1974-09-11 | Nonvolatile semiconductor memory |
| DE19742444906 DE2444906C3 (en) | 1973-09-21 | 1974-09-19 | MNOS memory FET |
| US05/705,561 US4123771A (en) | 1973-09-21 | 1976-07-15 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679373A JPS5613029B2 (en) | 1973-09-21 | 1973-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5057779A true JPS5057779A (en) | 1975-05-20 |
| JPS5613029B2 JPS5613029B2 (en) | 1981-03-25 |
Family
ID=14442758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10679373A Expired JPS5613029B2 (en) | 1973-09-21 | 1973-09-21 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5613029B2 (en) |
| CA (1) | CA1060993A (en) |
| DE (1) | DE2444906C3 (en) |
| GB (1) | GB1474745A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458376A (en) * | 1977-10-19 | 1979-05-11 | Agency Of Ind Science & Technol | Semiconductor memory unit and its writing method |
| JPS5718087A (en) * | 1980-04-09 | 1982-01-29 | Hughes Aircraft Co | Electrically erasable programmable read only memory device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1175601A (en) * | 1966-03-28 | 1969-12-23 | Matsushita Electronics Corp | Insulated-Gate Field-Effect Transistor |
| DE2201028C3 (en) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Method for operating a field effect transistor and field effect transistor for carrying out this method |
-
1973
- 1973-09-21 JP JP10679373A patent/JPS5613029B2/ja not_active Expired
-
1974
- 1974-09-09 GB GB3924474A patent/GB1474745A/en not_active Expired
- 1974-09-11 CA CA208,942A patent/CA1060993A/en not_active Expired
- 1974-09-19 DE DE19742444906 patent/DE2444906C3/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458376A (en) * | 1977-10-19 | 1979-05-11 | Agency Of Ind Science & Technol | Semiconductor memory unit and its writing method |
| JPS576710B2 (en) * | 1977-10-19 | 1982-02-06 | ||
| JPS5718087A (en) * | 1980-04-09 | 1982-01-29 | Hughes Aircraft Co | Electrically erasable programmable read only memory device |
| JPH0152840B2 (en) * | 1980-04-09 | 1989-11-10 | Hughes Aircraft Co |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2444906B2 (en) | 1981-05-27 |
| JPS5613029B2 (en) | 1981-03-25 |
| GB1474745A (en) | 1977-05-25 |
| CA1060993A (en) | 1979-08-21 |
| DE2444906A1 (en) | 1975-04-24 |
| DE2444906C3 (en) | 1982-02-04 |