JPS5029787B1 - - Google Patents

Info

Publication number
JPS5029787B1
JPS5029787B1 JP46102789A JP10278971A JPS5029787B1 JP S5029787 B1 JPS5029787 B1 JP S5029787B1 JP 46102789 A JP46102789 A JP 46102789A JP 10278971 A JP10278971 A JP 10278971A JP S5029787 B1 JPS5029787 B1 JP S5029787B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46102789A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7046400A external-priority patent/FR2119176A5/fr
Priority claimed from FR7046399A external-priority patent/FR2119175A5/fr
Application filed filed Critical
Publication of JPS5029787B1 publication Critical patent/JPS5029787B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP46102789A 1970-12-23 1971-12-20 Pending JPS5029787B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7046400A FR2119176A5 (en) 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd
FR7046399A FR2119175A5 (en) 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd

Publications (1)

Publication Number Publication Date
JPS5029787B1 true JPS5029787B1 (enExample) 1975-09-26

Family

ID=26216125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46102789A Pending JPS5029787B1 (enExample) 1970-12-23 1971-12-20

Country Status (6)

Country Link
US (1) US3823043A (enExample)
JP (1) JPS5029787B1 (enExample)
CA (1) CA930075A (enExample)
DE (1) DE2163075C2 (enExample)
GB (1) GB1370430A (enExample)
NL (1) NL7117428A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150251496A1 (en) * 2012-10-10 2015-09-10 The Yokohama Rubber Co., Ltd. Pneumatic Tire

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1439822A (en) * 1973-02-06 1976-06-16 Standard Telephones Cables Ltd Gallium arsenide photocathodes
GB1365465A (en) * 1973-02-06 1974-09-04 Standard Telephones Cables Ltd Semiconductor device manufacture
DE3345214A1 (de) * 1983-12-14 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode
JPS6415913A (en) * 1987-07-09 1989-01-19 Mitsubishi Monsanto Chem Epitaxial growth method of substrate for high-brightness led
JPH0770755B2 (ja) * 1988-01-21 1995-07-31 三菱化学株式会社 高輝度led用エピタキシャル基板及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370980A (en) * 1963-08-19 1968-02-27 Litton Systems Inc Method for orienting single crystal films on polycrystalline substrates
FR1600341A (enExample) * 1968-12-31 1970-07-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150251496A1 (en) * 2012-10-10 2015-09-10 The Yokohama Rubber Co., Ltd. Pneumatic Tire
US10821779B2 (en) 2012-10-10 2020-11-03 The Yokohama Rubber Co., Ltd. Pneumatic tire
US20210008927A1 (en) * 2012-10-10 2021-01-14 The Yokohama Rubber Co., Ltd. Pneumatic Tire
US11794524B2 (en) 2012-10-10 2023-10-24 The Yokohama Rubber Co., Ltd. Pneumatic tire

Also Published As

Publication number Publication date
NL7117428A (enExample) 1972-06-27
GB1370430A (en) 1974-10-16
US3823043A (en) 1974-07-09
CA930075A (en) 1973-07-10
DE2163075C2 (de) 1982-03-04
DE2163075A1 (enExample) 1972-07-13

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