JPS5026422B1 - - Google Patents
Info
- Publication number
- JPS5026422B1 JPS5026422B1 JP46030887A JP3088771A JPS5026422B1 JP S5026422 B1 JPS5026422 B1 JP S5026422B1 JP 46030887 A JP46030887 A JP 46030887A JP 3088771 A JP3088771 A JP 3088771A JP S5026422 B1 JPS5026422 B1 JP S5026422B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3636770A | 1970-05-11 | 1970-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5026422B1 true JPS5026422B1 (ko) | 1975-09-01 |
Family
ID=21888223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46030887A Pending JPS5026422B1 (ko) | 1970-05-11 | 1971-05-11 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3647389A (ko) |
JP (1) | JPS5026422B1 (ko) |
BE (1) | BE766750A (ko) |
CA (1) | CA952413A (ko) |
CH (1) | CH569514A5 (ko) |
DE (1) | DE2122192C3 (ko) |
FR (1) | FR2088484B1 (ko) |
GB (1) | GB1311048A (ko) |
IT (1) | IT942100B (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
JPS6024078B2 (ja) * | 1977-09-05 | 1985-06-11 | 株式会社東芝 | 3−5族化合物半導体単結晶の製造装置 |
US4277303A (en) * | 1978-08-07 | 1981-07-07 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot and method for growing the ingot |
US4299650A (en) * | 1979-10-12 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Minimization of strain in single crystals |
US4431476A (en) * | 1981-01-17 | 1984-02-14 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing gallium phosphide single crystals |
JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | CaAs単結晶への硼素のド−ピング方法 |
US4637854A (en) * | 1983-01-18 | 1987-01-20 | Agency Of Industrial Science And Technology | Method for producing GaAs single crystal |
JPS59232995A (ja) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | 引上単結晶の冷却方法 |
DE139157T1 (de) * | 1983-08-31 | 1985-11-07 | Research Development Corp. Of Japan, Tokio/Tokyo | Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen. |
US4721539A (en) * | 1986-07-15 | 1988-01-26 | The United States Of America As Represented By The United States Department Of Energy | Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
US4824520A (en) * | 1987-03-19 | 1989-04-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid encapsulated crystal growth |
US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
US5183767A (en) * | 1991-02-14 | 1993-02-02 | International Business Machines Corporation | Method for internal gettering of oxygen in iii-v compound semiconductors |
US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
WO2010053960A1 (en) * | 2008-11-07 | 2010-05-14 | The Regents Of The University Of California | Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals |
-
1970
- 1970-05-11 US US36367A patent/US3647389A/en not_active Expired - Lifetime
-
1971
- 1971-01-15 CA CA102,847A patent/CA952413A/en not_active Expired
- 1971-05-05 BE BE766750A patent/BE766750A/xx unknown
- 1971-05-05 DE DE2122192A patent/DE2122192C3/de not_active Expired
- 1971-05-07 GB GB1375671*[A patent/GB1311048A/en not_active Expired
- 1971-05-10 FR FR7116785A patent/FR2088484B1/fr not_active Expired
- 1971-05-11 IT IT50249/71A patent/IT942100B/it active
- 1971-05-11 JP JP46030887A patent/JPS5026422B1/ja active Pending
- 1971-05-11 CH CH689971A patent/CH569514A5/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB1311048A (en) | 1973-03-21 |
DE2122192C3 (de) | 1974-06-06 |
DE2122192B2 (de) | 1973-10-18 |
BE766750A (fr) | 1971-10-01 |
CH569514A5 (ko) | 1975-11-28 |
DE2122192A1 (de) | 1971-11-25 |
FR2088484B1 (ko) | 1976-04-16 |
FR2088484A1 (ko) | 1972-01-07 |
US3647389A (en) | 1972-03-07 |
IT942100B (it) | 1973-03-20 |
CA952413A (en) | 1974-08-06 |