JPS5026353B1 - - Google Patents

Info

Publication number
JPS5026353B1
JPS5026353B1 JP45074661A JP7466170A JPS5026353B1 JP S5026353 B1 JPS5026353 B1 JP S5026353B1 JP 45074661 A JP45074661 A JP 45074661A JP 7466170 A JP7466170 A JP 7466170A JP S5026353 B1 JPS5026353 B1 JP S5026353B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45074661A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5026353B1 publication Critical patent/JPS5026353B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP45074661A 1969-08-27 1970-08-27 Pending JPS5026353B1 (US20030199744A1-20031023-C00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85342469A 1969-08-27 1969-08-27

Publications (1)

Publication Number Publication Date
JPS5026353B1 true JPS5026353B1 (US20030199744A1-20031023-C00003.png) 1975-08-30

Family

ID=25316002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45074661A Pending JPS5026353B1 (US20030199744A1-20031023-C00003.png) 1969-08-27 1970-08-27

Country Status (8)

Country Link
US (1) US3611072A (US20030199744A1-20031023-C00003.png)
JP (1) JPS5026353B1 (US20030199744A1-20031023-C00003.png)
BE (1) BE755356A (US20030199744A1-20031023-C00003.png)
DE (1) DE2041727A1 (US20030199744A1-20031023-C00003.png)
FR (1) FR2059197A5 (US20030199744A1-20031023-C00003.png)
GB (1) GB1314985A (US20030199744A1-20031023-C00003.png)
SE (1) SE364811B (US20030199744A1-20031023-C00003.png)
ZA (1) ZA705359B (US20030199744A1-20031023-C00003.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132836U (US20030199744A1-20031023-C00003.png) * 1979-03-13 1980-09-20
JPS6098241U (ja) * 1983-12-09 1985-07-04 株式会社東海理化電機製作所 ダイヤフラムスイツチ

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346B1 (US20030199744A1-20031023-C00003.png) * 1970-08-14 1975-07-22
NL165888C (nl) * 1970-10-10 1981-05-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende een collectorzone, een basiszone en een emitterzone waarbij de emitterzone ten minste twee strookvormige onderling evenwijdige emittergebieden bevat, die uit afwisselend smallere en bredere delen bestaan.
JPS5532027B2 (US20030199744A1-20031023-C00003.png) * 1973-02-14 1980-08-22
JPS517883A (ja) * 1974-07-08 1976-01-22 Tokyo Shibaura Electric Co Geetotaanofusairisuta
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
GB1558840A (en) * 1977-02-07 1980-01-09 Rca Corp Gate controlled semiconductor device
NL190389C (nl) * 1978-06-14 1994-02-01 Gen Electric Poort-uitschakelbare thyristor.
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
DE4403429C2 (de) * 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210621A (en) * 1960-06-20 1965-10-05 Westinghouse Electric Corp Plural emitter semiconductor device
NL296392A (US20030199744A1-20031023-C00003.png) * 1963-08-07
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132836U (US20030199744A1-20031023-C00003.png) * 1979-03-13 1980-09-20
JPS6098241U (ja) * 1983-12-09 1985-07-04 株式会社東海理化電機製作所 ダイヤフラムスイツチ

Also Published As

Publication number Publication date
ZA705359B (en) 1971-04-28
GB1314985A (en) 1973-04-26
FR2059197A5 (US20030199744A1-20031023-C00003.png) 1971-05-28
US3611072A (en) 1971-10-05
BE755356A (fr) 1971-03-01
DE2041727A1 (de) 1971-03-04
SE364811B (US20030199744A1-20031023-C00003.png) 1974-03-04

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