JPS5024038A - - Google Patents

Info

Publication number
JPS5024038A
JPS5024038A JP5462174A JP5462174A JPS5024038A JP S5024038 A JPS5024038 A JP S5024038A JP 5462174 A JP5462174 A JP 5462174A JP 5462174 A JP5462174 A JP 5462174A JP S5024038 A JPS5024038 A JP S5024038A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5462174A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5024038A publication Critical patent/JPS5024038A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP5462174A 1973-06-29 1974-05-17 Pending JPS5024038A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37522273A 1973-06-29 1973-06-29

Publications (1)

Publication Number Publication Date
JPS5024038A true JPS5024038A (fr) 1975-03-14

Family

ID=23480012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5462174A Pending JPS5024038A (fr) 1973-06-29 1974-05-17

Country Status (3)

Country Link
JP (1) JPS5024038A (fr)
FR (1) FR2235454B1 (fr)
GB (1) GB1466007A (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136224A (en) * 1978-04-14 1979-10-23 Matsushita Electronics Corp Target electrode for color pick up tube and its manufacture
JPS5512688A (en) * 1978-07-14 1980-01-29 Matsushita Electronics Corp Target electrode for color camera
JPS5584976A (en) * 1978-12-22 1980-06-26 Nippon Telegraph & Telephone Surface treatment of transparent electrode layer
JPS55138278A (en) * 1979-04-11 1980-10-28 Hitachi Ltd Semiconducor non-volatile memory
JPS55156371A (en) * 1979-05-24 1980-12-05 Toshiba Corp Non-volatile semiconductor memory device
JPS5641644A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5641640A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5654702A (en) * 1979-10-11 1981-05-14 Hitachi Ltd Method of manufactuping transparent conductive film
JPS62104006A (ja) * 1985-10-30 1987-05-14 ロ−ム株式会社 酸化金属皮膜抵抗器の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1110947B (it) * 1978-01-19 1986-01-13 Sperry Rand Corp Elemento di memoria ad accesso comandato
DE3138947A1 (de) * 1981-09-30 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Speicherzelle mit einem doppel-gate feldeffekttransistor und verfahren zu ihrem betrieb

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136224A (en) * 1978-04-14 1979-10-23 Matsushita Electronics Corp Target electrode for color pick up tube and its manufacture
JPS5512688A (en) * 1978-07-14 1980-01-29 Matsushita Electronics Corp Target electrode for color camera
JPS5584976A (en) * 1978-12-22 1980-06-26 Nippon Telegraph & Telephone Surface treatment of transparent electrode layer
JPS55138278A (en) * 1979-04-11 1980-10-28 Hitachi Ltd Semiconducor non-volatile memory
JPS5729861B2 (fr) * 1979-04-11 1982-06-25
JPS55156371A (en) * 1979-05-24 1980-12-05 Toshiba Corp Non-volatile semiconductor memory device
JPS5641644A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5641640A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5654702A (en) * 1979-10-11 1981-05-14 Hitachi Ltd Method of manufactuping transparent conductive film
JPS6155205B2 (fr) * 1979-10-11 1986-11-26 Hitachi Ltd
JPS62104006A (ja) * 1985-10-30 1987-05-14 ロ−ム株式会社 酸化金属皮膜抵抗器の製造方法

Also Published As

Publication number Publication date
GB1466007A (en) 1977-03-02
FR2235454A1 (fr) 1975-01-24
FR2235454B1 (fr) 1977-09-30

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