JPS5019379A - - Google Patents

Info

Publication number
JPS5019379A
JPS5019379A JP49053923A JP5392374A JPS5019379A JP S5019379 A JPS5019379 A JP S5019379A JP 49053923 A JP49053923 A JP 49053923A JP 5392374 A JP5392374 A JP 5392374A JP S5019379 A JPS5019379 A JP S5019379A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49053923A
Other languages
Japanese (ja)
Other versions
JPS546357B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5019379A publication Critical patent/JPS5019379A/ja
Publication of JPS546357B2 publication Critical patent/JPS546357B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP5392374A 1973-05-16 1974-05-16 Expired JPS546357B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00360996A US3851379A (en) 1973-05-16 1973-05-16 Solid state components

Publications (2)

Publication Number Publication Date
JPS5019379A true JPS5019379A (OSRAM) 1975-02-28
JPS546357B2 JPS546357B2 (OSRAM) 1979-03-27

Family

ID=23420237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5392374A Expired JPS546357B2 (OSRAM) 1973-05-16 1974-05-16

Country Status (5)

Country Link
US (1) US3851379A (OSRAM)
JP (1) JPS546357B2 (OSRAM)
DE (1) DE2423670A1 (OSRAM)
FR (1) FR2230082B1 (OSRAM)
GB (1) GB1465629A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380976A (en) * 1976-12-25 1978-07-17 Toshiba Corp Semiconductor device
JPS53142881A (en) * 1977-05-19 1978-12-12 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPH0168532U (OSRAM) * 1987-10-23 1989-05-02

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
DE2341154C2 (de) * 1973-08-14 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung
US3951708A (en) * 1974-10-15 1976-04-20 Rca Corporation Method of manufacturing a semiconductor device
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
US4129879A (en) * 1977-04-21 1978-12-12 General Electric Company Vertical field effect transistor
US4206469A (en) * 1978-09-15 1980-06-03 Westinghouse Electric Corp. Power metal-oxide-semiconductor-field-effect-transistor
US4198250A (en) * 1979-02-05 1980-04-15 Intel Corporation Shadow masking process for forming source and drain regions for field-effect transistors and like regions
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
US4377899A (en) * 1979-11-19 1983-03-29 Sumitomo Electric Industries, Ltd. Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4393391A (en) * 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
FR2507821A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor a effet de champ vertical a jonction et procede de fabrication
US4449285A (en) * 1981-08-19 1984-05-22 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a vertical channel transistor
US4570174A (en) * 1981-08-21 1986-02-11 The United States Of America As Represented By The Secretary Of The Army Vertical MESFET with air spaced gate electrode
US4625388A (en) * 1982-04-26 1986-12-02 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask and resulting structure
US4419811A (en) * 1982-04-26 1983-12-13 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask
US4525919A (en) * 1982-06-16 1985-07-02 Raytheon Company Forming sub-micron electrodes by oblique deposition
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
FR2555816B1 (fr) * 1983-11-25 1986-04-11 Thomson Csf Transistor a effet de champ a structure verticale
FR2557368B1 (fr) * 1983-12-27 1986-04-11 Thomson Csf Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
JP3461277B2 (ja) * 1998-01-23 2003-10-27 株式会社東芝 半導体装置及びその製造方法
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3387360A (en) * 1965-04-01 1968-06-11 Sony Corp Method of making a semiconductor device
US3761785A (en) * 1971-04-23 1973-09-25 Bell Telephone Labor Inc Methods for making transistor structures
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380976A (en) * 1976-12-25 1978-07-17 Toshiba Corp Semiconductor device
JPS53142881A (en) * 1977-05-19 1978-12-12 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPH0168532U (OSRAM) * 1987-10-23 1989-05-02

Also Published As

Publication number Publication date
FR2230082B1 (OSRAM) 1979-02-16
JPS546357B2 (OSRAM) 1979-03-27
GB1465629A (en) 1977-02-23
US3851379A (en) 1974-12-03
DE2423670A1 (de) 1974-12-05
FR2230082A1 (OSRAM) 1974-12-13

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