JPS50153795A - - Google Patents
Info
- Publication number
- JPS50153795A JPS50153795A JP50053326A JP5332675A JPS50153795A JP S50153795 A JPS50153795 A JP S50153795A JP 50053326 A JP50053326 A JP 50053326A JP 5332675 A JP5332675 A JP 5332675A JP S50153795 A JPS50153795 A JP S50153795A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742425684 DE2425684A1 (de) | 1974-05-28 | 1974-05-28 | Verfahren zum aetzen von silicium enthaltenden materialien |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50153795A true JPS50153795A (US20110158925A1-20110630-C00042.png) | 1975-12-11 |
Family
ID=5916629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50053326A Pending JPS50153795A (US20110158925A1-20110630-C00042.png) | 1974-05-28 | 1975-05-06 |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007143890A (ja) * | 2005-11-28 | 2007-06-14 | Daio Paper Corp | 体液吸収性物品 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339349A (en) * | 1976-09-24 | 1978-04-11 | Asahi Glass Co Ltd | Thermosetting resin molding material |
| JPS5370688A (en) * | 1976-12-06 | 1978-06-23 | Toshiba Corp | Production of semoconductor device |
| US4283248A (en) * | 1979-02-01 | 1981-08-11 | Nitto Electric Industrial Co., Ltd. | Etching solution for tin-nickel alloy and process for etching the same |
| US4465550A (en) * | 1982-06-16 | 1984-08-14 | General Signal Corporation | Method and apparatus for slicing semiconductor ingots |
| US4713145A (en) * | 1986-12-19 | 1987-12-15 | Gulton Industries, Inc. | Method of etching etch-resistant materials |
| DE4414925A1 (de) * | 1994-04-28 | 1995-11-02 | Wacker Chemitronic | Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit |
| US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
| US6286685B1 (en) * | 1999-03-15 | 2001-09-11 | Seh America, Inc. | System and method for wafer thickness sorting |
| CN1720614A (zh) * | 2002-12-03 | 2006-01-11 | 皇家飞利浦电子股份有限公司 | 制造显示器的方法 |
| US20040226506A1 (en) * | 2003-05-14 | 2004-11-18 | Lynn David Mark | Coated wafer processing equipment |
| DE102007054484B3 (de) * | 2007-11-15 | 2009-03-12 | Deutsche Cell Gmbh | Strukturier-Verfahren |
| JP6433730B2 (ja) * | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置の製造方法及び半導体製造装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3715249A (en) * | 1971-09-03 | 1973-02-06 | Bell Telephone Labor Inc | Etching si3n4 |
| GB1423448A (en) * | 1973-07-18 | 1976-02-04 | Plessey Co Ltd | Method of selectively etching silicon nitride |
-
1974
- 1974-05-28 DE DE19742425684 patent/DE2425684A1/de not_active Withdrawn
-
1975
- 1975-04-21 US US05/570,068 patent/US3971683A/en not_active Expired - Lifetime
- 1975-04-24 FR FR7513743A patent/FR2273081B1/fr not_active Expired
- 1975-05-06 JP JP50053326A patent/JPS50153795A/ja active Pending
- 1975-05-15 GB GB2047575A patent/GB1475656A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007143890A (ja) * | 2005-11-28 | 2007-06-14 | Daio Paper Corp | 体液吸収性物品 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2273081B1 (US20110158925A1-20110630-C00042.png) | 1977-07-22 |
| DE2425684A1 (de) | 1975-12-11 |
| GB1475656A (en) | 1977-06-01 |
| US3971683A (en) | 1976-07-27 |
| FR2273081A1 (US20110158925A1-20110630-C00042.png) | 1975-12-26 |
