JPS50120283A - - Google Patents
Info
- Publication number
- JPS50120283A JPS50120283A JP2594474A JP2594474A JPS50120283A JP S50120283 A JPS50120283 A JP S50120283A JP 2594474 A JP2594474 A JP 2594474A JP 2594474 A JP2594474 A JP 2594474A JP S50120283 A JPS50120283 A JP S50120283A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2594474A JPS50120283A (enrdf_load_stackoverflow) | 1974-03-05 | 1974-03-05 | |
CA75220991A CA1049127A (en) | 1974-03-05 | 1975-02-28 | Semiconductor devices with improved heat radiation and current concentration |
FR7506766A FR2264392B1 (enrdf_load_stackoverflow) | 1974-03-05 | 1975-03-04 | |
DE2509585A DE2509585C3 (de) | 1974-03-05 | 1975-03-05 | Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung |
GB9154/75A GB1503983A (en) | 1974-03-05 | 1975-03-05 | Semiconductor device |
US05/968,924 US4255755A (en) | 1974-03-05 | 1978-12-13 | Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2594474A JPS50120283A (enrdf_load_stackoverflow) | 1974-03-05 | 1974-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50120283A true JPS50120283A (enrdf_load_stackoverflow) | 1975-09-20 |
Family
ID=12179852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2594474A Pending JPS50120283A (enrdf_load_stackoverflow) | 1974-03-05 | 1974-03-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50120283A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5251294U (enrdf_load_stackoverflow) * | 1975-10-07 | 1977-04-12 | ||
JPS5877274A (ja) * | 1981-11-02 | 1983-05-10 | Sanyo Electric Co Ltd | 半導体レ−ザ装置 |
JPS5931086A (ja) * | 1982-08-14 | 1984-02-18 | Nippon Telegr & Teleph Corp <Ntt> | 電流狭窄型半導体レ−ザ |
JPS616880A (ja) * | 1984-06-20 | 1986-01-13 | Rohm Co Ltd | 発光半導体素子およびその製造方法 |
JPS6120390A (ja) * | 1984-07-09 | 1986-01-29 | Agency Of Ind Science & Technol | 半導体レ−ザ素子とその製造方法 |
JPH0752884A (ja) * | 1993-08-20 | 1995-02-28 | Koji Tonouchi | 前後進自在オール |
-
1974
- 1974-03-05 JP JP2594474A patent/JPS50120283A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5251294U (enrdf_load_stackoverflow) * | 1975-10-07 | 1977-04-12 | ||
JPS5877274A (ja) * | 1981-11-02 | 1983-05-10 | Sanyo Electric Co Ltd | 半導体レ−ザ装置 |
JPS5931086A (ja) * | 1982-08-14 | 1984-02-18 | Nippon Telegr & Teleph Corp <Ntt> | 電流狭窄型半導体レ−ザ |
JPS616880A (ja) * | 1984-06-20 | 1986-01-13 | Rohm Co Ltd | 発光半導体素子およびその製造方法 |
JPS6120390A (ja) * | 1984-07-09 | 1986-01-29 | Agency Of Ind Science & Technol | 半導体レ−ザ素子とその製造方法 |
JPH0752884A (ja) * | 1993-08-20 | 1995-02-28 | Koji Tonouchi | 前後進自在オール |