JPS50120283A - - Google Patents

Info

Publication number
JPS50120283A
JPS50120283A JP2594474A JP2594474A JPS50120283A JP S50120283 A JPS50120283 A JP S50120283A JP 2594474 A JP2594474 A JP 2594474A JP 2594474 A JP2594474 A JP 2594474A JP S50120283 A JPS50120283 A JP S50120283A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2594474A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2594474A priority Critical patent/JPS50120283A/ja
Priority to CA75220991A priority patent/CA1049127A/en
Priority to FR7506766A priority patent/FR2264392B1/fr
Priority to DE2509585A priority patent/DE2509585C3/de
Priority to GB9154/75A priority patent/GB1503983A/en
Publication of JPS50120283A publication Critical patent/JPS50120283A/ja
Priority to US05/968,924 priority patent/US4255755A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2594474A 1974-03-05 1974-03-05 Pending JPS50120283A (enrdf_load_stackoverflow)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2594474A JPS50120283A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05
CA75220991A CA1049127A (en) 1974-03-05 1975-02-28 Semiconductor devices with improved heat radiation and current concentration
FR7506766A FR2264392B1 (enrdf_load_stackoverflow) 1974-03-05 1975-03-04
DE2509585A DE2509585C3 (de) 1974-03-05 1975-03-05 Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
GB9154/75A GB1503983A (en) 1974-03-05 1975-03-05 Semiconductor device
US05/968,924 US4255755A (en) 1974-03-05 1978-12-13 Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2594474A JPS50120283A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Publications (1)

Publication Number Publication Date
JPS50120283A true JPS50120283A (enrdf_load_stackoverflow) 1975-09-20

Family

ID=12179852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2594474A Pending JPS50120283A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Country Status (1)

Country Link
JP (1) JPS50120283A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251294U (enrdf_load_stackoverflow) * 1975-10-07 1977-04-12
JPS5877274A (ja) * 1981-11-02 1983-05-10 Sanyo Electric Co Ltd 半導体レ−ザ装置
JPS5931086A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 電流狭窄型半導体レ−ザ
JPS616880A (ja) * 1984-06-20 1986-01-13 Rohm Co Ltd 発光半導体素子およびその製造方法
JPS6120390A (ja) * 1984-07-09 1986-01-29 Agency Of Ind Science & Technol 半導体レ−ザ素子とその製造方法
JPH0752884A (ja) * 1993-08-20 1995-02-28 Koji Tonouchi 前後進自在オール

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251294U (enrdf_load_stackoverflow) * 1975-10-07 1977-04-12
JPS5877274A (ja) * 1981-11-02 1983-05-10 Sanyo Electric Co Ltd 半導体レ−ザ装置
JPS5931086A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 電流狭窄型半導体レ−ザ
JPS616880A (ja) * 1984-06-20 1986-01-13 Rohm Co Ltd 発光半導体素子およびその製造方法
JPS6120390A (ja) * 1984-07-09 1986-01-29 Agency Of Ind Science & Technol 半導体レ−ザ素子とその製造方法
JPH0752884A (ja) * 1993-08-20 1995-02-28 Koji Tonouchi 前後進自在オール

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