|
JP3437863B2
(ja)
*
|
1993-01-18 |
2003-08-18 |
株式会社半導体エネルギー研究所 |
Ｍｉｓ型半導体装置の作製方法
|
|
US4210878A
(en)
*
|
1976-01-20 |
1980-07-01 |
Nippon Electric Co., Ltd. |
Semiconductor laser element having a unitary film on a laser crystal and a heat sink thereof
|
|
JPS5334484A
(en)
*
|
1976-09-10 |
1978-03-31 |
Toshiba Corp |
Forming method for multi layer wiring
|
|
NL7704186A
(nl)
*
|
1977-04-18 |
1978-10-20 |
Philips Nv |
Werkwijze voor het galvanisch versterken van een geleidend basispatroon en inrichting ver- kregen met behulp van de werkwijze.
|
|
FR2459557A1
(fr)
*
|
1979-06-15 |
1981-01-09 |
Lerouzix Jean |
Support metallique pour reseau d'interconnexion de composants electroniques et procede de fabrication de ce support
|
|
US4517734A
(en)
*
|
1982-05-12 |
1985-05-21 |
Eastman Kodak Company |
Method of passivating aluminum interconnects of non-hermetically sealed integrated circuit semiconductor devices
|
|
JPH01235254A
(ja)
*
|
1988-03-15 |
1989-09-20 |
Nec Corp |
半導体装置及びその製造方法
|
|
US5126283A
(en)
*
|
1990-05-21 |
1992-06-30 |
Motorola, Inc. |
Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
|
|
JP3111478B2
(ja)
*
|
1991-02-06 |
2000-11-20 |
三菱電機株式会社 |
金属薄膜のテーパーエッチング方法及び薄膜トランジスタ
|
|
TW297142B
(enExample)
*
|
1993-09-20 |
1997-02-01 |
Handotai Energy Kenkyusho Kk |
|
|
JP2817590B2
(ja)
*
|
1993-09-24 |
1998-10-30 |
信越半導体株式会社 |
発光素子の製造方法
|
|
US6777763B1
(en)
*
|
1993-10-01 |
2004-08-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for fabricating the same
|
|
JP3030368B2
(ja)
|
1993-10-01 |
2000-04-10 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
JPH07135323A
(ja)
*
|
1993-10-20 |
1995-05-23 |
Semiconductor Energy Lab Co Ltd |
薄膜状半導体集積回路およびその作製方法
|
|
US5608246A
(en)
*
|
1994-02-10 |
1997-03-04 |
Ramtron International Corporation |
Integration of high value capacitor with ferroelectric memory
|
|
JP3402400B2
(ja)
|
1994-04-22 |
2003-05-06 |
株式会社半導体エネルギー研究所 |
半導体集積回路の作製方法
|
|
US6943764B1
(en)
|
1994-04-22 |
2005-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit for an active matrix display device
|
|
US6194127B1
(en)
|
1998-05-27 |
2001-02-27 |
Mcdonnell Douglas Corporation |
Resistive sheet patterning process and product thereof
|
|
US6370502B1
(en)
*
|
1999-05-27 |
2002-04-09 |
America Online, Inc. |
Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
|
|
US6376259B1
(en)
|
2001-03-21 |
2002-04-23 |
Ramtron International Corporation |
Method for manufacturing a ferroelectric memory cell including co-annealing
|
|
US6492673B1
(en)
|
2001-05-22 |
2002-12-10 |
Ramtron International Corporation |
Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the same
|
|
US6586325B2
(en)
*
|
2001-06-26 |
2003-07-01 |
Cosmos Vacuum Technology Corporation |
Process for making an electronic device having a multilevel structure
|
|
WO2004059177A1
(en)
*
|
2002-12-30 |
2004-07-15 |
Koninklijke Philips Electronics N.V. |
Method for maskless fabrication of self-aligned structures comprising a metal oxide
|
|
JP2006186053A
(ja)
*
|
2004-12-27 |
2006-07-13 |
Shinko Electric Ind Co Ltd |
積層型半導体装置
|
|
KR100744005B1
(ko)
*
|
2006-06-29 |
2007-07-30 |
주식회사 하이닉스반도체 |
반도체 소자의 금속 패턴 형성방법
|
|
WO2016044595A1
(en)
*
|
2014-09-17 |
2016-03-24 |
Massachusetts Institute Of Technology |
Aluminum based electroactive materials
|