JPS4979793A - - Google Patents
Info
- Publication number
- JPS4979793A JPS4979793A JP47122518A JP12251872A JPS4979793A JP S4979793 A JPS4979793 A JP S4979793A JP 47122518 A JP47122518 A JP 47122518A JP 12251872 A JP12251872 A JP 12251872A JP S4979793 A JPS4979793 A JP S4979793A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Thyristors (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47122518A JPS4979793A (de) | 1972-12-08 | 1972-12-08 | |
FR7338798A FR2210017B1 (de) | 1972-12-08 | 1973-10-31 | |
NL7316475A NL7316475A (de) | 1972-12-08 | 1973-11-30 | |
DE19732361172 DE2361172A1 (de) | 1972-12-08 | 1973-12-07 | Halbleitervorrichtung |
GB5677073A GB1451084A (en) | 1972-12-08 | 1973-12-07 | Integrated semiconductor memories |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47122518A JPS4979793A (de) | 1972-12-08 | 1972-12-08 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13883780A Division JPS5660050A (en) | 1980-10-06 | 1980-10-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4979793A true JPS4979793A (de) | 1974-08-01 |
Family
ID=14837823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47122518A Pending JPS4979793A (de) | 1972-12-08 | 1972-12-08 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4979793A (de) |
DE (1) | DE2361172A1 (de) |
FR (1) | FR2210017B1 (de) |
GB (1) | GB1451084A (de) |
NL (1) | NL7316475A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5199478A (ja) * | 1975-02-28 | 1976-09-02 | Hitachi Ltd | Handotaishusekikairo |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5325375A (en) * | 1976-07-31 | 1978-03-09 | Nippon Gakki Seizo Kk | Semiconductor integrated circuit devi ce |
JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
KR950005463B1 (ko) * | 1992-06-29 | 1995-05-24 | 재단법인한국전자통신연구소 | 에미터 커플드 논리 반도체 장치 |
-
1972
- 1972-12-08 JP JP47122518A patent/JPS4979793A/ja active Pending
-
1973
- 1973-10-31 FR FR7338798A patent/FR2210017B1/fr not_active Expired
- 1973-11-30 NL NL7316475A patent/NL7316475A/xx unknown
- 1973-12-07 DE DE19732361172 patent/DE2361172A1/de active Pending
- 1973-12-07 GB GB5677073A patent/GB1451084A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5199478A (ja) * | 1975-02-28 | 1976-09-02 | Hitachi Ltd | Handotaishusekikairo |
JPS5628027B2 (de) * | 1975-02-28 | 1981-06-29 |
Also Published As
Publication number | Publication date |
---|---|
GB1451084A (en) | 1976-09-29 |
FR2210017A1 (de) | 1974-07-05 |
FR2210017B1 (de) | 1978-01-06 |
DE2361172A1 (de) | 1974-06-12 |
NL7316475A (de) | 1974-06-11 |