JPS4971950A - - Google Patents

Info

Publication number
JPS4971950A
JPS4971950A JP48107058A JP10705873A JPS4971950A JP S4971950 A JPS4971950 A JP S4971950A JP 48107058 A JP48107058 A JP 48107058A JP 10705873 A JP10705873 A JP 10705873A JP S4971950 A JPS4971950 A JP S4971950A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48107058A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4971950A publication Critical patent/JPS4971950A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P14/69391—
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10P14/6306—
    • H10P14/6324—
    • H10P50/646—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
JP48107058A 1972-09-25 1973-09-25 Pending JPS4971950A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00291937A US3833435A (en) 1972-09-25 1972-09-25 Dielectric optical waveguides and technique for fabricating same

Publications (1)

Publication Number Publication Date
JPS4971950A true JPS4971950A (enExample) 1974-07-11

Family

ID=23122505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48107058A Pending JPS4971950A (enExample) 1972-09-25 1973-09-25

Country Status (10)

Country Link
US (1) US3833435A (enExample)
JP (1) JPS4971950A (enExample)
BE (1) BE805142A (enExample)
CA (1) CA1003511A (enExample)
DE (1) DE2347802C2 (enExample)
FR (1) FR2200533B1 (enExample)
GB (1) GB1448372A (enExample)
IT (1) IT1004023B (enExample)
NL (1) NL7312980A (enExample)
SE (1) SE387751B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147410A (ja) * 1987-12-02 1989-06-09 Furukawa Electric Co Ltd:The 埋め込み型光導波路
JPH01198706A (ja) * 1987-12-02 1989-08-10 Furukawa Electric Co Ltd:The 埋め込み型光導波路

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994758A (en) * 1973-03-19 1976-11-30 Nippon Electric Company, Ltd. Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US4121177A (en) * 1973-05-28 1978-10-17 Hitachi, Ltd. Semiconductor device and a method of fabricating the same
US4213805A (en) * 1973-05-28 1980-07-22 Hitachi, Ltd. Liquid phase epitaxy method of forming a filimentary laser device
US4005312A (en) * 1973-11-08 1977-01-25 Lemelson Jerome H Electro-optical circuits and manufacturing techniques
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US3984173A (en) * 1974-04-08 1976-10-05 Texas Instruments Incorporated Waveguides for integrated optics
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS50159288A (enExample) * 1974-06-11 1975-12-23
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
NL7505134A (nl) * 1975-05-01 1976-11-03 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting.
DE2624436C2 (de) * 1976-06-01 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtwellenleiter mit integriertem Detektorelement
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
NL7903197A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
US4360246A (en) * 1980-05-23 1982-11-23 Hughes Aircraft Company Integrated waveguide and FET detector
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4550489A (en) * 1981-11-23 1985-11-05 International Business Machines Corporation Heterojunction semiconductor
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor
US4582390A (en) * 1982-01-05 1986-04-15 At&T Bell Laboratories Dielectric optical waveguide and technique for fabricating same
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
US4661961A (en) * 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
US4595454A (en) * 1984-06-15 1986-06-17 At&T Bell Laboratories Fabrication of grooved semiconductor devices
US4652333A (en) * 1985-06-19 1987-03-24 Honeywell Inc. Etch process monitors for buried heterostructures
US4764246A (en) * 1985-08-06 1988-08-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide and method of making same
US4725112A (en) * 1985-08-06 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator
JPS63211788A (ja) * 1987-02-27 1988-09-02 Mitsubishi Electric Corp 半導体レ−ザおよびその製造方法
US4961618A (en) * 1989-06-05 1990-10-09 The United States Of America As Represented By The Secretary Of The Navy Optical communication system having a wide-core single-mode planar waveguide
JP2550798B2 (ja) * 1991-04-12 1996-11-06 富士通株式会社 微小冷陰極の製造方法
US5270532A (en) * 1992-06-15 1993-12-14 The United States Of America As Represented By The United States Department Of Energy Traveling-wave photodetector
US5567659A (en) * 1995-05-25 1996-10-22 Northern Telecom Limited Method of etching patterns in III-V material with accurate depth control
DE19627793C2 (de) * 1996-07-10 2002-02-28 Forschungszentrum Juelich Gmbh Wellenleiter
DE19650133C1 (de) * 1996-12-03 1998-01-02 Forschungszentrum Juelich Gmbh Optischer Empfänger und Verfahren zu seiner Herstellung
KR100347542B1 (ko) 1999-12-22 2002-08-07 주식회사 하이닉스반도체 반도체 소자의 전하저장전극 형성 방법
AU2001290893A1 (en) * 2000-09-15 2002-03-26 Regents Of The University Of California Oxide and air apertures and method of manufacture
KR101020387B1 (ko) * 2002-12-20 2011-03-08 크리 인코포레이티드 반도체 메사 구조와 도전형 접합을 포함하는 전자 소자 및그 제조방법
JP5223552B2 (ja) * 2008-05-02 2013-06-26 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563630A (en) * 1966-12-07 1971-02-16 North American Rockwell Rectangular dielectric optical wave-guide of width about one-half wave-length of the transmitted light

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465159A (en) * 1966-06-27 1969-09-02 Us Army Light amplifying device
US3523223A (en) * 1967-11-01 1970-08-04 Texas Instruments Inc Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
BE792614A (fr) * 1971-12-13 1973-03-30 Western Electric Co Procede de realisation d'une couche d'oxyde sur un semi-conducteur

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563630A (en) * 1966-12-07 1971-02-16 North American Rockwell Rectangular dielectric optical wave-guide of width about one-half wave-length of the transmitted light

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147410A (ja) * 1987-12-02 1989-06-09 Furukawa Electric Co Ltd:The 埋め込み型光導波路
JPH01198706A (ja) * 1987-12-02 1989-08-10 Furukawa Electric Co Ltd:The 埋め込み型光導波路

Also Published As

Publication number Publication date
FR2200533B1 (enExample) 1978-01-13
NL7312980A (enExample) 1974-03-27
DE2347802A1 (de) 1974-05-22
CA1003511A (en) 1977-01-11
GB1448372A (en) 1976-09-08
US3833435A (en) 1974-09-03
IT1004023B (it) 1976-07-10
DE2347802C2 (de) 1982-07-29
FR2200533A1 (enExample) 1974-04-19
SE387751B (sv) 1976-09-13
BE805142A (fr) 1974-01-16

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