JPS4962076A - - Google Patents

Info

Publication number
JPS4962076A
JPS4962076A JP48051570A JP5157073A JPS4962076A JP S4962076 A JPS4962076 A JP S4962076A JP 48051570 A JP48051570 A JP 48051570A JP 5157073 A JP5157073 A JP 5157073A JP S4962076 A JPS4962076 A JP S4962076A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48051570A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4962076A publication Critical patent/JPS4962076A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/961Ion beam source and generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP48051570A 1972-05-09 1973-05-09 Pending JPS4962076A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722222736 DE2222736A1 (de) 1972-05-09 1972-05-09 Verfahren zur ionenimplantation

Publications (1)

Publication Number Publication Date
JPS4962076A true JPS4962076A (enrdf_load_stackoverflow) 1974-06-15

Family

ID=5844509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48051570A Pending JPS4962076A (enrdf_load_stackoverflow) 1972-05-09 1973-05-09

Country Status (10)

Country Link
US (1) US3909305A (enrdf_load_stackoverflow)
JP (1) JPS4962076A (enrdf_load_stackoverflow)
BE (1) BE799319A (enrdf_load_stackoverflow)
CA (1) CA1011228A (enrdf_load_stackoverflow)
CH (1) CH578891A5 (enrdf_load_stackoverflow)
DE (1) DE2222736A1 (enrdf_load_stackoverflow)
FR (1) FR2183853B1 (enrdf_load_stackoverflow)
IT (1) IT987106B (enrdf_load_stackoverflow)
LU (1) LU67556A1 (enrdf_load_stackoverflow)
NL (1) NL7306419A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
DE2835121A1 (de) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Verfahren und vorrichtung zum dotieren von halbleitern mittels ionenimplantation
EP0079931B1 (en) * 1981-05-26 1987-03-11 Hughes Aircraft Company Focused ion beam microfabrication column
EP0221897A1 (en) * 1985-05-17 1987-05-20 J.C. Schumacher Company Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
US5837568A (en) * 1995-12-12 1998-11-17 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor devices
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US7361915B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Beam current stabilization utilizing gas feed control loop

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3558376A (en) * 1966-01-07 1971-01-26 Siemens Ag Method for controlled doping by gas of foreign substance into semiconductor materials
US3442725A (en) * 1966-05-05 1969-05-06 Motorola Inc Phosphorus diffusion system
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Also Published As

Publication number Publication date
CA1011228A (en) 1977-05-31
LU67556A1 (enrdf_load_stackoverflow) 1973-07-13
FR2183853B1 (enrdf_load_stackoverflow) 1977-02-11
NL7306419A (enrdf_load_stackoverflow) 1973-11-13
CH578891A5 (enrdf_load_stackoverflow) 1976-08-31
DE2222736A1 (de) 1973-11-22
BE799319A (fr) 1973-08-31
US3909305A (en) 1975-09-30
FR2183853A1 (enrdf_load_stackoverflow) 1973-12-21
IT987106B (it) 1975-02-20

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