FR2183853B1 - - Google Patents

Info

Publication number
FR2183853B1
FR2183853B1 FR7316292A FR7316292A FR2183853B1 FR 2183853 B1 FR2183853 B1 FR 2183853B1 FR 7316292 A FR7316292 A FR 7316292A FR 7316292 A FR7316292 A FR 7316292A FR 2183853 B1 FR2183853 B1 FR 2183853B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7316292A
Other versions
FR2183853A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2183853A1 publication Critical patent/FR2183853A1/fr
Application granted granted Critical
Publication of FR2183853B1 publication Critical patent/FR2183853B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Electron Sources, Ion Sources (AREA)
FR7316292A 1972-05-09 1973-05-07 Expired FR2183853B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722222736 DE2222736A1 (de) 1972-05-09 1972-05-09 Verfahren zur ionenimplantation

Publications (2)

Publication Number Publication Date
FR2183853A1 FR2183853A1 (fr) 1973-12-21
FR2183853B1 true FR2183853B1 (fr) 1977-02-11

Family

ID=5844509

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7316292A Expired FR2183853B1 (fr) 1972-05-09 1973-05-07

Country Status (10)

Country Link
US (1) US3909305A (fr)
JP (1) JPS4962076A (fr)
BE (1) BE799319A (fr)
CA (1) CA1011228A (fr)
CH (1) CH578891A5 (fr)
DE (1) DE2222736A1 (fr)
FR (1) FR2183853B1 (fr)
IT (1) IT987106B (fr)
LU (1) LU67556A1 (fr)
NL (1) NL7306419A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
DE2835121A1 (de) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Verfahren und vorrichtung zum dotieren von halbleitern mittels ionenimplantation
WO1982004351A1 (fr) * 1981-05-26 1982-12-09 Aircraft Co Hughes Colonne de microfabrication d'un faisceau d'ions focalises
WO1986006875A1 (fr) * 1985-05-17 1986-11-20 J.C. Schumacher Company Implantation ionique utilisant des tetrafluoroborates alcalin ou d'un metal alcalino-terreux en tant que source d'ions de bore
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
US5837568A (en) * 1995-12-12 1998-11-17 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor devices
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US7361915B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Beam current stabilization utilizing gas feed control loop

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3558376A (en) * 1966-01-07 1971-01-26 Siemens Ag Method for controlled doping by gas of foreign substance into semiconductor materials
US3442725A (en) * 1966-05-05 1969-05-06 Motorola Inc Phosphorus diffusion system
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Also Published As

Publication number Publication date
US3909305A (en) 1975-09-30
CH578891A5 (fr) 1976-08-31
BE799319A (fr) 1973-08-31
LU67556A1 (fr) 1973-07-13
DE2222736A1 (de) 1973-11-22
JPS4962076A (fr) 1974-06-15
CA1011228A (en) 1977-05-31
FR2183853A1 (fr) 1973-12-21
NL7306419A (fr) 1973-11-13
IT987106B (it) 1975-02-20

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Legal Events

Date Code Title Description
ST Notification of lapse