JPS4945688A - - Google Patents
Info
- Publication number
- JPS4945688A JPS4945688A JP48054847A JP5484773A JPS4945688A JP S4945688 A JPS4945688 A JP S4945688A JP 48054847 A JP48054847 A JP 48054847A JP 5484773 A JP5484773 A JP 5484773A JP S4945688 A JPS4945688 A JP S4945688A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
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- H10W10/012—
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- H10W10/13—
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- H10W20/20—
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26777172A | 1972-06-30 | 1972-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4945688A true JPS4945688A (cg-RX-API-DMAC10.html) | 1974-05-01 |
| JPS528229B2 JPS528229B2 (cg-RX-API-DMAC10.html) | 1977-03-08 |
Family
ID=23020055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48054847A Expired JPS528229B2 (cg-RX-API-DMAC10.html) | 1972-06-30 | 1973-05-18 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS528229B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1005925A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2318912A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2191270B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1422586A (cg-RX-API-DMAC10.html) |
| IT (1) | IT987426B (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212165A (ja) * | 1983-05-23 | 1983-12-09 | Nec Corp | 半導体装置 |
| JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2554450A1 (de) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Verfahren zur herstellung einer integrierten schaltung |
| DE2720533A1 (de) * | 1977-05-06 | 1978-11-09 | Siemens Ag | Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen |
| CA1186808A (en) * | 1981-11-06 | 1985-05-07 | Sidney I. Soclof | Method of fabrication of dielectrically isolated cmos device with an isolated slot |
| JPS58100441A (ja) * | 1981-12-10 | 1983-06-15 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0616549B2 (ja) * | 1984-04-17 | 1994-03-02 | 三菱電機株式会社 | 半導体集積回路装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
| FR2080849A6 (cg-RX-API-DMAC10.html) * | 1970-02-06 | 1971-11-26 | Radiotechnique Compelec | |
| US3698966A (en) * | 1970-02-26 | 1972-10-17 | North American Rockwell | Processes using a masking layer for producing field effect devices having oxide isolation |
| US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
| US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
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1973
- 1973-04-14 DE DE2318912A patent/DE2318912A1/de not_active Ceased
- 1973-05-15 IT IT24074/73A patent/IT987426B/it active
- 1973-05-18 JP JP48054847A patent/JPS528229B2/ja not_active Expired
- 1973-06-01 GB GB2620873A patent/GB1422586A/en not_active Expired
- 1973-06-04 CA CA173,051A patent/CA1005925A/en not_active Expired
- 1973-06-06 FR FR7321783A patent/FR2191270B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212165A (ja) * | 1983-05-23 | 1983-12-09 | Nec Corp | 半導体装置 |
| JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2191270B1 (cg-RX-API-DMAC10.html) | 1977-07-29 |
| GB1422586A (en) | 1976-01-28 |
| IT987426B (it) | 1975-02-20 |
| DE2318912A1 (de) | 1974-01-17 |
| CA1005925A (en) | 1977-02-22 |
| JPS528229B2 (cg-RX-API-DMAC10.html) | 1977-03-08 |
| FR2191270A1 (cg-RX-API-DMAC10.html) | 1974-02-01 |