FR2191270A1 - - Google Patents
Info
- Publication number
- FR2191270A1 FR2191270A1 FR7321783A FR7321783A FR2191270A1 FR 2191270 A1 FR2191270 A1 FR 2191270A1 FR 7321783 A FR7321783 A FR 7321783A FR 7321783 A FR7321783 A FR 7321783A FR 2191270 A1 FR2191270 A1 FR 2191270A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H10W10/012—
-
- H10W10/13—
-
- H10W20/20—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26777172A | 1972-06-30 | 1972-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2191270A1 true FR2191270A1 (cg-RX-API-DMAC10.html) | 1974-02-01 |
| FR2191270B1 FR2191270B1 (cg-RX-API-DMAC10.html) | 1977-07-29 |
Family
ID=23020055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7321783A Expired FR2191270B1 (cg-RX-API-DMAC10.html) | 1972-06-30 | 1973-06-06 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS528229B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1005925A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2318912A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2191270B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1422586A (cg-RX-API-DMAC10.html) |
| IT (1) | IT987426B (cg-RX-API-DMAC10.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2390009A1 (cg-RX-API-DMAC10.html) * | 1977-05-06 | 1978-12-01 | Siemens Ag | |
| EP0082256A3 (en) * | 1981-12-10 | 1986-05-07 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device comprising dielectric isolation regions |
| EP0078890A3 (en) * | 1981-11-06 | 1986-05-07 | Rockwell International Corporation | Method of fabrication of dielectrically isolated cmos device with an isolated slot |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2554450A1 (de) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Verfahren zur herstellung einer integrierten schaltung |
| JPS58212165A (ja) * | 1983-05-23 | 1983-12-09 | Nec Corp | 半導体装置 |
| JPH0616549B2 (ja) * | 1984-04-17 | 1994-03-02 | 三菱電機株式会社 | 半導体集積回路装置 |
| JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1549386A (cg-RX-API-DMAC10.html) * | 1966-10-05 | 1968-12-13 | ||
| FR2079612A5 (cg-RX-API-DMAC10.html) * | 1970-02-06 | 1971-11-12 | Radiotechnique Compelec | |
| FR2080769A1 (cg-RX-API-DMAC10.html) * | 1970-02-26 | 1971-11-19 | North American Rockwell | |
| NL7116712A (cg-RX-API-DMAC10.html) * | 1970-12-21 | 1972-06-23 | ||
| FR2134468A1 (cg-RX-API-DMAC10.html) * | 1971-04-30 | 1972-12-08 | Standard Microsystems |
-
1973
- 1973-04-14 DE DE2318912A patent/DE2318912A1/de not_active Ceased
- 1973-05-15 IT IT24074/73A patent/IT987426B/it active
- 1973-05-18 JP JP48054847A patent/JPS528229B2/ja not_active Expired
- 1973-06-01 GB GB2620873A patent/GB1422586A/en not_active Expired
- 1973-06-04 CA CA173,051A patent/CA1005925A/en not_active Expired
- 1973-06-06 FR FR7321783A patent/FR2191270B1/fr not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1549386A (cg-RX-API-DMAC10.html) * | 1966-10-05 | 1968-12-13 | ||
| FR2079612A5 (cg-RX-API-DMAC10.html) * | 1970-02-06 | 1971-11-12 | Radiotechnique Compelec | |
| FR2080769A1 (cg-RX-API-DMAC10.html) * | 1970-02-26 | 1971-11-19 | North American Rockwell | |
| NL7116712A (cg-RX-API-DMAC10.html) * | 1970-12-21 | 1972-06-23 | ||
| FR2134468A1 (cg-RX-API-DMAC10.html) * | 1971-04-30 | 1972-12-08 | Standard Microsystems |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2390009A1 (cg-RX-API-DMAC10.html) * | 1977-05-06 | 1978-12-01 | Siemens Ag | |
| EP0078890A3 (en) * | 1981-11-06 | 1986-05-07 | Rockwell International Corporation | Method of fabrication of dielectrically isolated cmos device with an isolated slot |
| EP0082256A3 (en) * | 1981-12-10 | 1986-05-07 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device comprising dielectric isolation regions |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2191270B1 (cg-RX-API-DMAC10.html) | 1977-07-29 |
| JPS4945688A (cg-RX-API-DMAC10.html) | 1974-05-01 |
| GB1422586A (en) | 1976-01-28 |
| IT987426B (it) | 1975-02-20 |
| DE2318912A1 (de) | 1974-01-17 |
| CA1005925A (en) | 1977-02-22 |
| JPS528229B2 (cg-RX-API-DMAC10.html) | 1977-03-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |