JPS4924361A - - Google Patents

Info

Publication number
JPS4924361A
JPS4924361A JP47064785A JP6478572A JPS4924361A JP S4924361 A JPS4924361 A JP S4924361A JP 47064785 A JP47064785 A JP 47064785A JP 6478572 A JP6478572 A JP 6478572A JP S4924361 A JPS4924361 A JP S4924361A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47064785A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47064785A priority Critical patent/JPS4924361A/ja
Priority to US371619A priority patent/US3897276A/en
Publication of JPS4924361A publication Critical patent/JPS4924361A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
JP47064785A 1972-06-27 1972-06-27 Pending JPS4924361A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47064785A JPS4924361A (ja) 1972-06-27 1972-06-27
US371619A US3897276A (en) 1972-06-27 1973-06-20 Method of implanting ions of different mass numbers in semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47064785A JPS4924361A (ja) 1972-06-27 1972-06-27

Publications (1)

Publication Number Publication Date
JPS4924361A true JPS4924361A (ja) 1974-03-04

Family

ID=13268214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47064785A Pending JPS4924361A (ja) 1972-06-27 1972-06-27

Country Status (2)

Country Link
US (1) US3897276A (ja)
JP (1) JPS4924361A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123614A (en) * 1979-03-16 1980-09-24 Daicel Chem Ind Ltd Photosensitive resin and positive type-photosensitive resin composition
JPS55127553A (en) * 1979-03-27 1980-10-02 Daicel Chem Ind Ltd Photosensitive composition
JPS55145341A (en) * 1979-04-30 1980-11-12 Ibm Method of removing lattice fault
JPS60176034A (ja) * 1984-02-23 1985-09-10 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS62149717A (ja) * 1979-03-16 1987-07-03 Daicel Chem Ind Ltd 感光性樹脂の製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
DE2507613C3 (de) * 1975-02-21 1979-07-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines invers betriebenen Transistors
US4030943A (en) * 1976-05-21 1977-06-21 Hughes Aircraft Company Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US5238858A (en) * 1988-10-31 1993-08-24 Sharp Kabushiki Kaisha Ion implantation method
US5256579A (en) * 1989-04-03 1993-10-26 Massachusetts Institute Of Technology Tunable-frequency Gunn diodes fabrication with focused ion beams
JP2626289B2 (ja) * 1990-03-27 1997-07-02 松下電器産業株式会社 半導体装置の製造方法
GB2316224B (en) * 1996-06-14 2000-10-04 Applied Materials Inc Ion implantation method
JP2006229145A (ja) * 2005-02-21 2006-08-31 Oki Electric Ind Co Ltd 不純物の注入深さの監視方法
US9991328B2 (en) 2016-08-25 2018-06-05 International Business Machines Corporation Tunable on-chip nanosheet resistor
US20240012199A1 (en) * 2022-07-08 2024-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of formation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3628185A (en) * 1970-03-30 1971-12-14 Bell Telephone Labor Inc Solid-state high-frequency source

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123614A (en) * 1979-03-16 1980-09-24 Daicel Chem Ind Ltd Photosensitive resin and positive type-photosensitive resin composition
JPS6223788B2 (ja) * 1979-03-16 1987-05-25 Daicel Chem
JPS62149717A (ja) * 1979-03-16 1987-07-03 Daicel Chem Ind Ltd 感光性樹脂の製造方法
JPS6260407B2 (ja) * 1979-03-16 1987-12-16 Daicel Chem
JPS55127553A (en) * 1979-03-27 1980-10-02 Daicel Chem Ind Ltd Photosensitive composition
JPS55145341A (en) * 1979-04-30 1980-11-12 Ibm Method of removing lattice fault
JPS5821419B2 (ja) * 1979-04-30 1983-04-30 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 格子欠陥除去方法
JPS60176034A (ja) * 1984-02-23 1985-09-10 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPH0336420B2 (ja) * 1984-02-23 1991-05-31 Japan Synthetic Rubber Co Ltd

Also Published As

Publication number Publication date
US3897276A (en) 1975-07-29

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