JPS49131744A - - Google Patents

Info

Publication number
JPS49131744A
JPS49131744A JP49034038A JP3403874A JPS49131744A JP S49131744 A JPS49131744 A JP S49131744A JP 49034038 A JP49034038 A JP 49034038A JP 3403874 A JP3403874 A JP 3403874A JP S49131744 A JPS49131744 A JP S49131744A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49034038A
Other languages
Japanese (ja)
Other versions
JPS5717314B2 (US06605200-20030812-C00035.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49131744A publication Critical patent/JPS49131744A/ja
Publication of JPS5717314B2 publication Critical patent/JPS5717314B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP3403874A 1973-04-18 1974-03-28 Expired JPS5717314B2 (US06605200-20030812-C00035.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US352143A US3879621A (en) 1973-04-18 1973-04-18 Sense amplifier

Publications (2)

Publication Number Publication Date
JPS49131744A true JPS49131744A (US06605200-20030812-C00035.png) 1974-12-17
JPS5717314B2 JPS5717314B2 (US06605200-20030812-C00035.png) 1982-04-09

Family

ID=23383963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3403874A Expired JPS5717314B2 (US06605200-20030812-C00035.png) 1973-04-18 1974-03-28

Country Status (5)

Country Link
US (1) US3879621A (US06605200-20030812-C00035.png)
JP (1) JPS5717314B2 (US06605200-20030812-C00035.png)
DE (1) DE2414917C2 (US06605200-20030812-C00035.png)
FR (1) FR2226780B1 (US06605200-20030812-C00035.png)
GB (1) GB1453231A (US06605200-20030812-C00035.png)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144346A (US06605200-20030812-C00035.png) * 1974-05-09 1975-11-20
JPS526039A (en) * 1975-06-30 1977-01-18 Ibm Amplifying and sensing latch
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS52139329A (en) * 1976-05-17 1977-11-21 Toshiba Corp Circuit ensuring high-speed signal level change
JPS5352325A (en) * 1976-10-25 1978-05-12 Toshiba Corp Mos random access memory
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
JPS53148989A (en) * 1977-06-01 1978-12-26 Hitachi Ltd Mis-type semiconductor memory device

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28905E (en) * 1967-10-19 1976-07-13 Bell Telephone Laboratories, Incorporated Field effect transistor memory cell
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
DE2460150C2 (de) * 1974-12-19 1984-07-12 Ibm Deutschland Gmbh, 7000 Stuttgart Monolitisch integrierbare Speicheranordnung
US3971004A (en) * 1975-03-13 1976-07-20 Rca Corporation Memory cell with decoupled supply voltage while writing
US3976895A (en) * 1975-03-18 1976-08-24 Bell Telephone Laboratories, Incorporated Low power detector circuit
US3953839A (en) * 1975-04-10 1976-04-27 International Business Machines Corporation Bit circuitry for enhance-deplete ram
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
DE2724646A1 (de) * 1976-06-01 1977-12-15 Texas Instruments Inc Halbleiterspeicheranordnung
US4114055A (en) * 1977-05-12 1978-09-12 Rca Corporation Unbalanced sense circuit
US4107556A (en) * 1977-05-12 1978-08-15 Rca Corporation Sense circuit employing complementary field effect transistors
JPS5472641A (en) * 1977-11-21 1979-06-11 Toshiba Corp Voltage detection circuit
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier
JPS59915B2 (ja) * 1979-11-29 1984-01-09 富士通株式会社 メモリ回路
DE3101520A1 (de) * 1981-01-19 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
USRE34060E (en) * 1981-06-01 1992-09-08 Hitachi, Ltd. High speed semiconductor memory device having a high gain sense amplifier
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS57210714A (en) * 1981-06-22 1982-12-24 Nippon Technical Co Ltd Tuning circuit
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4496857A (en) * 1982-11-01 1985-01-29 International Business Machines Corporation High speed low power MOS buffer circuit for converting TTL logic signal levels to MOS logic signal levels
JPS6010495A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd センスアンプ
JPS6043295A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
JPS6063786A (ja) * 1983-09-17 1985-04-12 Fujitsu Ltd センスアンプ
EP0265572A1 (en) * 1986-10-29 1988-05-04 International Business Machines Corporation High signal sensitivity high speed receiver in CMOS technology
JPS63146612A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp トグルフリツプフロツプ回路
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
JP2828630B2 (ja) * 1987-08-06 1998-11-25 三菱電機株式会社 半導体装置
US4816706A (en) * 1987-09-10 1989-03-28 International Business Machines Corporation Sense amplifier with improved bitline precharging for dynamic random access memory
US4843264A (en) * 1987-11-25 1989-06-27 Visic, Inc. Dynamic sense amplifier for CMOS static RAM
EP0329910B1 (en) * 1988-02-26 1991-05-29 International Business Machines Corporation Double stage sense amplifier for random access memories
DE68905240T2 (de) * 1988-06-01 1993-07-15 Nippon Electric Co Halbleiterspeichereinrichtung mit hochgeschwindigkeits-lesevorrichtung.
NL8802973A (nl) * 1988-12-02 1990-07-02 Philips Nv Geintegreerde geheugenschakeling.
JP3227932B2 (ja) * 1993-09-27 2001-11-12 ソニー株式会社 レベル変換回路
DE19621769C1 (de) * 1996-05-30 1997-06-19 Siemens Ag Leseverstärker für Halbleiterspeicherzellen mit einer Einrichtung zur Kompensation von Schwellenspannungsunterschieden bei den Leseverstärkertransistoren
US5982203A (en) * 1998-01-09 1999-11-09 International Business Machines Corporation Two stage SRCMOS sense amplifier
US6351155B1 (en) 1999-02-17 2002-02-26 Elbrus International Limited High-speed sense amplifier capable of cascade connection
TW499794B (en) 2000-05-05 2002-08-21 Ind Tech Res Inst Receiver and transmitter for signal transmission
US7023243B2 (en) * 2002-05-08 2006-04-04 University Of Southern California Current source evaluation sense-amplifier
TW527776B (en) * 2002-05-20 2003-04-11 Ind Tech Res Inst Base input differential logic circuit
US6906529B2 (en) 2003-06-10 2005-06-14 Stmicroelectronics, Inc. Capacitive sensor device with electrically configurable pixels
US7084671B1 (en) * 2004-01-26 2006-08-01 Sun Microsystems, Inc. Sense amplifier and method for making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115623A (US06605200-20030812-C00035.png) * 1973-02-23 1974-11-05

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3267295A (en) * 1964-04-13 1966-08-16 Rca Corp Logic circuits
GB1113111A (en) * 1964-05-29 1968-05-08 Nat Res Dev Digital storage devices
US3440444A (en) * 1965-12-30 1969-04-22 Rca Corp Driver-sense circuit arrangement
US3671772A (en) * 1969-10-01 1972-06-20 Ibm Difference amplifier
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems
US3638039A (en) * 1970-09-18 1972-01-25 Rca Corp Operation of field-effect transistor circuits having substantial distributed capacitance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115623A (US06605200-20030812-C00035.png) * 1973-02-23 1974-11-05

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5746156B2 (US06605200-20030812-C00035.png) * 1974-05-09 1982-10-01
JPS50144346A (US06605200-20030812-C00035.png) * 1974-05-09 1975-11-20
JPS5612955B2 (US06605200-20030812-C00035.png) * 1975-06-30 1981-03-25
JPS526039A (en) * 1975-06-30 1977-01-18 Ibm Amplifying and sensing latch
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS52139329A (en) * 1976-05-17 1977-11-21 Toshiba Corp Circuit ensuring high-speed signal level change
JPS5643557B2 (US06605200-20030812-C00035.png) * 1976-10-25 1981-10-13
JPS5352325A (en) * 1976-10-25 1978-05-12 Toshiba Corp Mos random access memory
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5747511B2 (US06605200-20030812-C00035.png) * 1976-11-19 1982-10-09
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
JPS5713951B2 (US06605200-20030812-C00035.png) * 1976-12-13 1982-03-20
JPS53148989A (en) * 1977-06-01 1978-12-26 Hitachi Ltd Mis-type semiconductor memory device
JPS6120149B2 (US06605200-20030812-C00035.png) * 1977-06-01 1986-05-21 Hitachi Ltd

Also Published As

Publication number Publication date
US3879621A (en) 1975-04-22
FR2226780B1 (US06605200-20030812-C00035.png) 1977-09-16
GB1453231A (en) 1976-10-20
JPS5717314B2 (US06605200-20030812-C00035.png) 1982-04-09
FR2226780A1 (US06605200-20030812-C00035.png) 1974-11-15
DE2414917C2 (de) 1983-08-18
DE2414917A1 (de) 1974-10-24

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